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參數(shù)資料
| 型號(hào)： | 1MB10D-120 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類(lèi)： | IGBT 晶體管 |
| 英文描述： | Fuji Discrete Package IGBT |
| 中文描述： | 16 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | TO-3P, 3 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 226K |
| 代理商： | 1MB10D-120 |
0
1
2
3
4
5
6
0
5
10
15
20
25
12V
8V
10V
V
GE
=20V,15V
Collector Current vs. Collector-Emitter Voltage
T
j
=25°C
C
C
Collector-Emitter Voltage : V
CE
[V]
0
1
2
3
4
5
6
0
5
10
15
20
25
12V
8V
10V
V
GE
=20V,15V
Collector Current vs. Collector-Emitter Voltage
T
j
=125°C
C
C
Collector-Emitter Voltage : V
CE
[V]
0
5
10
15
20
25
0
2
4
6
8
10
12
I
C
=
20A
10A
5A
Collector-Emitter Voltage vs. Gate-Emitter Voltage
T
j
=25°C
C
C
Gate-Emitter Voltage : V
GE
[V]
0
5
10
15
20
25
0
2
4
6
8
10
12
I
C
=
20A
10A
5A
Collector-Emitter Voltage vs. Gate-Emitter Voltage
T
j
=125°C
C
C
Gate-Emitter Voltage : V
GE
[V]
0
5
10
15
20
100
1000
t
f
t
r
t
off
t
on
Switching Time vs. Collector Current
V
CC
=600V, R
G
=16
, V
GE
=±15V, T
j
=25°C
S
o
,
r
,
o
,
f
Collector Current : I
C
[A]
0
5
10
15
20
100
1000
t
f
t
r
t
off
t
on
Switching Time vs. Collector Current
V
CC
=600V, R
G
=16
, V
GE
=±15V, T
j
=125°C
S
o
,
r
,
o
,
f
Collector Current : I
C
[A]
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相關(guān)代理商/技術(shù)參數(shù) |
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| 1MB12-140 | 制造商:n/a 功能描述:Power Semiconductor |
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| 1MB20-060 | 制造商:FUJI 制造商全稱(chēng):Fuji Electric 功能描述:Fuji Discrete Package IGBT |
| 1MB20D-060 | 制造商:FUJI 制造商全稱(chēng):Fuji Electric 功能描述:Fuji Discrete Package IGBT |
| 1MB30-060 | 制造商:FUJI 制造商全稱(chēng):Fuji Electric 功能描述:600V / 30A Molded Package |
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