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參數(shù)資料
| 型號： | 1888-03 |
| 廠商： | 意法半導體 |
| 英文描述： | RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS |
| 中文描述： | 射頻 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 42K |
| 代理商： | 1888-03 |
1.6 GHz SATCOM APPLICATIONS
RF & MICROWAVE TRANSISTORS
.250 x .320 2LFL (M170)
epoxy sealed
ORDER CODE
SD1888-03
.
1.65 GHz
.
28 VOLTS
.
EFFICIENCY 50% MIN.
.
CLASS C OPERATION
.
COMMON BASE
.
INPUT/OUTPUT MATCHING
.
P
OUT
=
24 W MIN. WITH 9.0 dB GAIN
DESCRIPTION
The SD1888-03 is a 28 V Class C silicon NPN
transistor designed for INMARSAT and other 1.65
GHz SATCOM applications. Agold metallized emit-
ter-ballasted die geometry is employed providing
high gain and efficiency while ensuring long term
reliability and ruggedness under severe operating
conditions. SD1888-03 is packaged in a cost-ef-
fective epoxy sealed housing
PIN CONNECTION
BRANDING
1888-3
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
°
C)
Symbol
Parameter
Value
Unit
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
45
12
3.0
V
V
V
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
2.6
50
+200
A
W
°
C
°
C
65 to +150
R
TH(j-c)
Junction-Case Thermal Resistance
3.5
°
C/W
SD1888-03
1. Collector
2. Emitter
3. Base
THERMAL DATA
July 1993
1/4
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