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| 型號： | 16AM12 |
| 英文描述： | BJT |
| 中文描述： | 雙極型晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 100K |
| 代理商： | 16AM12 |
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
16AM12
12 Watts, 22 Volts, Class A
Linear, 1
600 MHz
GENERAL DESCRIPTION
The 16AM12 is a COMMON EMITTER transistor capable of providing 12
Watts Class A, RF output power in the band 1500 - 1700 MHz. The transistor
includes double input and output prematching for full broadband capability.
Gold metalization and diffused ballasting are used to provide high reliability
and supreme ruggedness.
CASE OUTLINE
55AT, STYLE 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C
58 Watts
o
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
45 Volts
BVebo
Emitter to Base Voltage
3.5 Volts
Ic
Collector Current
4.0 Amps
Maximum Temperatures
Storage Temperature
- 65 to + 200 C
o
Operating Junction Temperature
+ 200 C
o
SEE NOTE BELOW
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
η
Pg
VSWR l
Power Out - 1 dB
Power Input
Efficiency
Power Gain - Small Signal
Load Mismatch Tolerance
F = 1600 MHz
Vcc = 22 Volts, Icq = 2A
Pout = 12 Watts
12
8.0
9 : 1
2.25
Watts
dB
BVces
BVebo
BVceo
Hfe
θjc
Collector to Base Breakdown
Emitter to Base Breakdown
Collector to Emitter Breakdown
Current Gain
Thermal Resistance
Ic = 50 mA
Ie = 10 mA
Ic = 50 mA
Vce = 5 V, Ic = 1 A
Tc = 25 C
o
45
3.5
24
15
2.8
3.0
Volts
C/W
o
Case Outline Note: During 1995 Ghz will be converting the 55AT style flange to the version using a slot in the mounting
area, refer to 55AW.
Issue February 1996
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