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| 型號(hào)： | 1617AM10 |
| 英文描述： | BJT |
| 中文描述： | 雙極型晶體管 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 488K |
| 代理商： | 1617AM10 |
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
1617AB35
35 Watts, 25 Volts, Class AB
Satcom 1600 - 1700 MHz
GENERAL DESCRIPTION
The 1617AB35 is a COMMON EMITTER transistor capable of providing 35
Watts of Class AB, RF output power over the band 1600 - 1700 MHz. This
transistor is specifically designed for SATCOM COMMUNICATIONS
amplifier applications. It includes Input prematching and utilizes Gold
metalization and EMITTER BALLASTING to provide high reliability and
supreme ruggedness. .
CASE OUTLINE
55AR, STYLE 2
COMMON EMITTER
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C
120 Watts
o
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
60 Volts
LVceo
Collector to Emitter Voltage
27 Volts
BVebo
Emitter to Base Voltage
3.5 Volts
Ic
Collector Current
14.0 Amps
Maximum Temperatures
Storage Temperature
- 65 to + 150 C
o
Operating Junction Temperature
+ 230 C
o
A49
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg
η
c
VSWR
IMD
3
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
3rd Order IMD
F =1700 MHz
Vce = 25 Volts
Icq = 250 mAmps
As Above
35
9.0
10.0
50
4.5
3:1
-30
Watt
dB
%
dBc
BVces
LVceo
BVebo
Ices
h
FE
Cob
θjc
Collector to Emitter Breakdown
Emitter to Base Breakdown
Collector Leakage Current
DC - Current Gain
Output Capacitance
Thermal Resistance
Ic = 50 mA
Ie = 10 mA
Vce = 27 Volts
Vce = 5 V, Ic = 0.7 A
F =1 MHz, Vcb = 28 V
Tc = 25 C
o
60
27
3.5
20
36
10
100
1.6
Volts
mA
pF
C/W
o
Issue January 1996
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