參數(shù)資料
型號(hào): 160MT100KB
元件分類: 參考電壓二極管
英文描述: 3 PHASE, 160 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
封裝: INT-A-PAK-6
文件頁數(shù): 6/7頁
文件大?。?/td> 94K
代理商: 160MT100KB
130-160MT..KB Series
Bulletin I27502 rev. A 05/03
www.irf.com
6
Fig. 8 - Total Power Loss Characteristics
Fig. 9 - Maximum Non-Repetitive Surge Current
Fig. 10 - Maximum Non-Repetitive Surge Current
0
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
R
=
0.0
5
K
/W
-
D
elt
a
R
th
S
A
0.1
K
/W
0.2
K/W
0.3
K/W
0.5 K
/W
0.1
5
K/W
0.7 K/W
1.5 K/W
0
100
200
300
400
500
600
0
40
80
120
160
200
Total Output Current (A)
Ma
xi
mu
m
T
ot
al
P
o
w
e
r
L
o
s
(W)
120°
(Rect)
160MT..KB Series
T = 150°C
J
300
400
500
600
700
800
900
1000
1100
1200
1300
110
100
P
e
a
k
H
a
lf
S
ine
W
a
v
e
F
o
rwa
rd
C
u
rre
nt
(A
)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
160MT..KB Series
Initial T = 150°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
J
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
RRM
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
0.01
0.1
1
Pe
a
k
Hal
f
Si
n
e
W
a
v
e
F
o
rw
a
rd
C
u
rr
e
n
t
(A
)
Pulse Train Duration (s)
Initial T = 150°C
No Voltage Reapplied
Rated V
Reapplied
RRM
Versus Pulse Train Duration.
Maximum Non Repetitive Surge Current
J
160MT..KB Series
Fig. 11 - Thermal Impedance Z
thJC
Characteristic
0.01
0.1
1
10
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
th
J
C
T
ran
si
e
n
t
T
h
e
rm
al
Im
p
e
da
n
c
e
Z
(K
/W)
Per Junction
130MT..KB Series
160MT..KB Series
Steady State Value
R= 0.93 K/W
R= 0.73 K/W
(DC Operation)
thJC
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