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參數(shù)資料
| 型號(hào)： | 1528-6 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | ECONOMY FO CERAMIC SIMPLX62.5 PVC ST/ST 2M |
| 中文描述： | 射頻 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 44K |
| 代理商： | 1528-6 |
AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.280 4 LFL (M115)
epoxy sealed
.
DESIGNED FOR HIGH POWER PULSED
IFF, DME, TACAN APPLICATIONS
.
20 W (typ.) IFF 1030 - 1090 MHz
.
15 W (min.) DME 1025 - 1150 MHz
.
15 W (typ.) TACAN 960 - 1215 MHz
.
REFRACTORY GOLD METALLIZATION
.
EMITTER BALLASTED AND LOW
THERMAL RESISTANCE FOR
RELIABILITY AND RUGGEDNESS
.
20:1 LOAD VSWR CAPABILITY @
SPECIFIED OPERATING CONDITIONS
.
INPUT MATCHED, COMMON BASE
CONFIGURATION
DESCRIPTION
The SD1528-06 isa goldmetallized epitaxial silicon
NPN power transistor. The SD1528-06 isdesigned
for applications requiring high peak power and
low duty cycles such as IFF, DME and TACAN.
The SD1528-06 is packaged in the .280” input
matched stripline package, resulting in improved
broadband performance and low thermal resist-
ance.
PIN CONNECTION
BRANDING
1528-6
ORDER CODE
SD1528-06
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
°
C)
Symbol
Parameter
Value
Unit
V
CBO
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
65
65
3.5
V
V
V
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
1.5
87.5
+200
A
W
°
C
°
C
65 to +150
R
TH(j-c)
Junction-Case Thermal Resistance
2.0
°
C/W
SD1528-06
1. Collector
2. Base
3. Emitter
4. Base
THERMAL DATA
November 1992
1/4
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