參數(shù)資料
型號: 13003BR
廠商: MOSPEC SEMICONDUCTOR CORP.
英文描述: POWER TRANSISTORS(1.5A,300-400V,40W)
中文描述: 功率晶體管(1.5A的,300 -為400V,功率40W)
文件頁數(shù): 1/3頁
文件大小: 125K
代理商: 13003BR
13003
TRANSISTOR( NPN )
FEATURES
Power dissipation
PCM :
1.5
W(Tamb=25℃)
Collector current
ICM
:
1.5
A
Collector-base voltage
V(BR)CBO :
700
V
Operating and storage junction temperature range
TJ,Tstg: -55℃ to +150℃
ELECTRICAL
CHARACTERISTICS(Tamb=25℃
unless
otherwise
specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= 1000 A,IE=0
700
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic= 10
mA,IB=0
400
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 1000 A,IC=0
9
V
Collector cut-off current
ICBO
VCB= 700 V, IE=0
1000
A
Collector cut-off current
ICEO
VCE= 400 V, IB=0
500
A
Emitter cut-off current
IEBO
VEB=
9
V, IC=0
1000
A
hFE1
VCE= 2 V, IC= 0.5 A
8
40
DC current gain
hFE2
VCE= 10 V, IC= 0.5 mA
5
Collector-emitter saturation voltage
VCE(sat)
IC=1000m A,IB=250 mA
1
V
Base-emitter saturation voltage
VBE(sat)
IC=1000m A, IB= 250mA
1.2
V
Base-emitter voltage
VBE
IE= 2000 mA
3
V
Transition frequency
fT
Ic=100mA,VCE=10V
f=1MHZ
5
MHZ
Fall time
tf
0.5
S
Storage time
ts
Vcc=100V,
Ic=1A
IB1=-IB2=0.2A
2.5
S
CLASSIFICATION OF hFE(1)
Rank
Range
8-15
15-20
20-25
25-30
30-35
35-40
1 2 3
TO—220
1.BASE
2.COLLECTOR
3.EMITTER
HSiN Semiconductor Pte Ltd
www.hsin.com.sg
Transistor (NPN)
13003
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