參數(shù)資料
型號： 128
廠商： Intersil Corporation
英文描述： Ultra High Frequency Transistor Arrays
中文描述： 超高頻晶體管陣列
文件頁數(shù)： 4/13頁
文件大?。?/td> 306K
代理商： 128
4
FN3076.13
December 21, 2005
Power Gain-Bandwidth Product,
f
MAX
I
C
= 10mA, V
CE
= 5V
-
6
-
-
2.5
-
GHz
Base to Emitter Capacitance
V
BE
= -3V
-
200
-
-
500
-
fF
Collector to Base Capacitance
V
CB
= 3V
-
200
-
-
500
-
fF
Electrical Specifications
T
A
= 25°C
(Continued)
PARAMETER
TEST CONDITIONS
DIE
SOIC, QFN
UNITS
MIN
TYP
MAX
MIN
TYP
MAX
Electrical Specifications
T
A
= 25°C
PARAMETER
TEST CONDITIONS
DIE
SOIC, QFN
UNITS
MIN
TYP
MAX
MIN
TYP
MAX
DC PNP CHARACTERISTICS
Collector to Base Breakdown
Voltage, V
(BR)CBO
I
C
= -100
μ
A, I
E
= 0
10
15
-
10
15
-
V
Collector to Emitter Breakdown
Voltage, V
(BR)CEO
I
C
= -100
μ
A, I
B
= 0
8
15
-
8
15
-
V
Collector to Emitter Breakdown
Voltage, V
(BR)CES
I
C
= -100
μ
A, Base Shorted to Emitter
10
15
-
10
15
-
V
Emitter to Base Breakdown
Voltage, V
(BR)EBO
I
E
= -10
μ
A, I
C
= 0
4.5
5
-
4.5
5
-
V
Collector Cutoff Current, I
CEO
V
CE
= -6V, I
B
= 0
-
2
100
-
2
100
nA
Collector Cutoff Current, I
CBO
V
CB
= -8V, I
E
= 0
-
0.1
10
-
0.1
10
nA
Collector to Emitter Saturation
Voltage, V
CE(SAT)
I
C
= -10mA, I
B
= -1mA
-
0.3
0.5
-
0.3
0.5
V
Base to Emitter Voltage, V
BE
I
C
= -10mA
-
0.85
0.95
-
0.85
0.95
V
DC Forward-Current Transfer
Ratio, h
FE
I
C
= -10mA, V
CE
= -2V
20
60
-
20
60
-
Early Voltage, V
A
I
C
= -1mA, V
CE
= -3.5V
10
20
-
10
20
-
V
Base to Emitter Voltage Drift
I
C
= -10mA
-
-1.5
-
-
-1.5
-
mV/°C
Collector to Collector Leakage
-
1
-
-
1
-
pA
Electrical Specifications
T
A
= 25°C
PARAMETER
TEST CONDITIONS
DIE
SOIC, QFN
UNITS
MIN
TYP
MAX
MIN
TYP
MAX
DYNAMIC PNP CHARACTERISTICS
Noise Figure
f = 1.0GHz, V
CE
= -5V,
I
C
= -5mA, Z
S
= 50
-
3.5
-
-
3.5
-
dB
f
T
Current Gain-Bandwidth
Product
I
C
= -1mA, V
CE
= -5V
-
2
-
-
2
-
GHz
I
C
= -10mA, V
CE
= -5V
-
5.5
-
-
5.5
-
GHz
Power Gain-Bandwidth
Product
I
C
= -10mA, V
CE
= -5V
-
3
-
-
2
-
GHz
Base to Emitter Capacitance
V
BE
= 3V
-
200
-
-
500
-
fF
Collector to Base Capacitance
V
CB
= -3V
-
300
-
-
600
-
fF
HFA3046, HFA3096, HFA3127, HFA3128
相關PDF資料
PDF描述
128Z Ultra High Frequency Transistor Arrays
12861 VI-200 MODULE SHIELD WITHOUT PEM NUTS
12861-1 VI-200 MODULE SHIELD WITHOUT PEM NUTS
129NQ150 SCHOTTKY RECTIFIER
12BS Test Prod Wire; Conductor Size AWG:18; No. Strands x Strand Size:65 x 36; Jacket Color:Green; Conductor Material:Copper; Jacket Material:Rubber; Leaded Process Compatible:Yes; Number of Conductors:1; Outer Diameter:0.144" RoHS Compliant: Yes
相關代理商/技術參數(shù)
參數(shù)描述
12-8 功能描述:端子 RING 16-14 AWG 8 RoHS:否 制造商:AVX 產品:Junction Box - Wire to Wire 系列:9826 線規(guī):26-18 接線柱/接頭大小: 絕緣: 顏色:Red 型式:Female 觸點電鍍:Tin over Nickel 觸點材料:Beryllium Copper, Phosphor Bronze 端接類型:Crimp
128/0.05 100M BLACK - SILICONE 制造商:ESCABLE 功能描述:
128/0.05 100M BLUE 制造商:ESCABLE 功能描述:
128/0.05 100M RED 制造商:ESCABLE 功能描述:
128/0.05 100M RL GRN 制造商:ESCABLE 功能描述:
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*