參數(shù)資料
型號(hào)： 127
廠(chǎng)商： Intersil Corporation
英文描述： Ultra High Frequency Transistor Arrays
中文描述： 超高頻晶體管陣列
文件頁(yè)數(shù)： 3/13頁(yè)
文件大?。?/td> 306K
代理商： 127
3
FN3076.13
December 21, 2005
Absolute Maximum Ratings
Thermal Information
Collector to Emitter Voltage (Open Base) . . . . . . . . . . . . . . . . . . 8V
Collector to Base Voltage (Open Emitter) . . . . . . . . . . . . . . . . . 12V
Emitter to Base Voltage (Reverse Bias). . . . . . . . . . . . . . . . . . . 5.5V
Collector Current (100% Duty Cycle) . . . . . . 18.5mA at T
J
= 150°C
34mA at T
J
= 125°C
37mA at T
J
= 110°C
Peak Collector Current (Any Condition). . . . . . . . . . . . . . . . . . 65mA
Operating Information
Temperature Range. . . . . . . . . . . . . . . . . . . . . . . . . -55°C to 125°C
Thermal Resistance (Typical)
14 Ld SOIC Package (Note 1) . . . . . . .
16 Ld SOIC Package (Note 1) . . . . . . .
QFN Package (Notes 2, 3). . . . . . . . . .
Maximum Power Dissipation (Any One Transistor). . . . . . . . 0.15W
Maximum Junction Temperature (Die). . . . . . . . . . . . . . . . . . . 175°C
Maximum Junction Temperature (Plastic Package) . . . . . . . 150°C
Maximum Storage Temperature Range. . . . . . . . . . -65°C to 150°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300°C
(SOIC - Lead Tips Only)
θ
JA
(°C/W)
120
115
57
θ
JC
(°C/W)
N/A
N/A
10
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1.
θ
JA
is measured with the component mounted on an evaluation PC board in free air.
2. For
θ
JC
, the “case temp” location is the center of the exposed metal pad on the package underside.
3.
θ
JA
is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
Electrical Specifications
T
A
= 25°C
PARAMETER
TEST CONDITIONS
DIE
SOIC, QFN
UNITS
MIN
TYP
MAX
MIN
TYP
MAX
DC NPN CHARACTERISTICS
Collector to Base Breakdown
Voltage, V
(BR)CBO
I
C
= 100
μ
A, I
E
= 0
12
18
-
12
18
-
V
Collector to Emitter Breakdown
Voltage, V
(BR)CEO
I
C
= 100
μ
A, I
B
= 0
8
12
-
8
12
-
V
Collector to Emitter Breakdown
Voltage, V
(BR)CES
I
C
= 100
μ
A, Base Shorted to Emitter
10
20
-
10
20
-
V
Emitter to Base Breakdown
Voltage, V
(BR)EBO
I
E
= 10
μ
A, I
C
= 0
5.5
6
-
5.5
6
-
V
Collector-Cutoff-Current, I
CEO
V
CE
= 6V, I
B
= 0
-
2
100
-
2
100
nA
Collector-Cutoff-Current, I
CBO
V
CB
= 8V, I
E
= 0
-
0.1
10
-
0.1
10
nA
Collector to Emitter Saturation
Voltage, V
CE(SAT)
I
C
= 10mA, I
B
= 1mA
-
0.3
0.5
-
0.3
0.5
V
Base to Emitter Voltage, V
BE
I
C
= 10mA
-
0.85
0.95
-
0.85
0.95
V
DC Forward-Current Transfer
Ratio, h
FE
I
C
= 10mA, V
CE
= 2V
40
130
-
40
130
-
Early Voltage, V
A
I
C
= 1mA, V
CE
= 3.5V
20
50
-
20
50
-
V
Base to Emitter Voltage Drift
I
C
= 10mA
-
-1.5
-
-
-1.5
-
mV/°C
Collector to Collector Leakage
-
1
-
-
1
-
pA
Electrical Specifications
T
A
= 25°C
PARAMETER
TEST CONDITIONS
DIE
SOIC, QFN
UNITS
MIN
TYP
MAX
MIN
TYP
MAX
DYNAMIC NPN CHARACTERISTICS
Noise Figure
f = 1.0GHz, V
CE
= 5V,
I
C
= 5mA, Z
S
= 50
-
3.5
-
-
3.5
-
dB
f
T
Current Gain-Bandwidth
Product
I
C
= 1mA, V
CE
= 5V
-
5.5
-
-
5.5
-
GHz
I
C
= 10mA, V
CE
= 5V
-
8
-
-
8
-
GHz
HFA3046, HFA3096, HFA3127, HFA3128
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