參數(shù)資料
型號: 1206CG101J9AB
英文描述: KONDENSATOR 100PF 50V 10ST
中文描述: KONDENSATOR 100pF的50V 10ST
文件頁數(shù): 10/19頁
文件大小: 1068K
代理商: 1206CG101J9AB
2001 Jun 13
18
BCcomponents
Product specification
Surface mount multilayer
chip capacitors
Class 1, NP0 low voltage
10, 16, 25 and 50 V
TESTS AND REQUIREMENTS
Table 10 Test procedures and requirements
TEST
PROCEDURE
REQUIREMENTS
Visual and mechanical
no visible damage
dimensions in accordance with
specification
Capacitance
C
≤ 1000 pF, 1.0 ±0.2 Vrms; f = 1 MHz ±10%
C > 1000 pF, 1.0
±0.2 Vrms; f = 1 kHz ±10%
shall not exceed the limits given in the
detailed specification
Q value
C
≤ 1000 pF, 1.0 ±0.2 Vrms; f = 1 MHz ±10%
≥30 pF: Q ≥ 1000
<30 pF: Q
≥ 400 + 20C
C > 1000 pF, 1.0
±0.2 Vrms; f = 1 kHz ±10%
Dielectric strength
250% of rated voltage for 1 to 5 s, charge and
discharge current less than 50 mA
no visible damage or flash-over during
test
Insulation resistance
at UR (DC) for max. 60 s ±5 s
100 G
min. or 1000 F min.,
whichever is less
Temperature coefficient
with no electrical load:
55 to 125 °C at Tamb = 25 °C
30
× 106/°C
Bending test
the middle part of the substrate shall be
pressurized by means of the pressurizing rod
at a rate of about 1 mm per second until the
deflection becomes 1 mm and then the
pressure shall be maintained for 5
±1s
measurement after 24
±2 hours at room
temperature
no visible damage
C/C: ±5.0 max. or ±0.5 pF max.,
whichever is greater
this capacitance change means the
change of capacitance under specified
flexure of substrate from the capacitance
measured before the test
Solderability
230
±5 °Cfor 2 ±0.5 s; solder: SN63A
95% min. coverage of entire metallized
area
Resistance to soldering heat
260
±5 °C for 10 ±1s;
solder: SN63A;
measurement after 24
±2 hours at room
temperature
no visible damage
C/C: ±2.5% max. or ±0.25 pF max.,
whichever is greater
DF, Rins and dielectric strength to meet
initial requirements
10% max. leaching on each edge
Temperature cycle
55 to 125 °C; 5 cycles in the following
sequence:
55 °C 3/+0 for 30 ±3 minutes;
room temperature for 2 to 3 minutes;
125
°C +3/0 for 30 ±3 minutes;
room temperature for 2 to 3 minutes
measurement after 24
±2 hours at room
temperature
no visible damage
C/C: ±2.5% max. or ±0.25 pF max.,
whichever is greater
DF, Rins and dielectric strength to meet
initial requirements
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