參數(shù)資料
型號(hào): 11DQ04
廠商: VISHAY SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: DIODE 1.1 A, 40 V, SILICON, RECTIFIER DIODE, DO-204AL, PLASTIC, DO-41, 2 PIN, Rectifier Diode
中文描述: Schottky (Diodes & Rectifiers) 1.1 Amp 40 Volt
文件頁數(shù): 2/5頁
文件大?。?/td> 85K
代理商: 11DQ04
11DQ03, 11DQ04
Bulletin PD-2.287 rev. F 11/04
2
www.irf.com
T
J
T
stg
R
thJA
Max. Thermal Resistance Junction
to Ambient
R
thJL
Typical Thermal Resistance Junction
to Lead
wt
Approximate Weight
Case Style
Max. Junction Temperature Range (*) -40 to 150
Max. Storage Temperature Range
°C
°C
-40 to 150
100
°C/W DC operation
Without cooling fin
°C/W DC Operation (* See Fig. 4)
81
0.33(0.012) g (oz.)
DO-204AL(DO-41)
Part number
11DQ03
11DQ04
V
R
Max.
DC Reverse Voltage (V)
V
RWM
Max.
Working Peak Reverse Voltage (V)
Voltage Ratings
30
40
V
FM
Max. Forward Voltage Drop
* See Fig. 1
0.55
0.71
0.50
0.61
V
V
V
V
@ 1A
@ 2A
@ 1A
@ 2A
(1)
I
RM
Max. Reverse Leakage Current
* See Fig. 2
Typical Junction Capacitance
Typical Series Inductance
1.0
6.0
60
8.0
mA
mA
pF
nH
T
J
= 25 °C
T
J
= 125 °C
V
R
= 5V
DC
(test signal range 100Khz to 1Mhz) 25°C
Measured lead to lead 5mm from package body
(1)
C
T
L
S
dv/dt Max. Voltage Rate of Change
10000
V/μs
(Rated V
R
)
T
J
= 25 °C
T
J
= 125 °C
V
R
= rated V
R
Parameters
11DQ..
Units
Conditions
Electrical Specifications
(1) Pulse Width < 300μs, Duty Cycle <2%
Thermal-Mechanical Specifications
Parameters
11DQ..
Units
Conditions
I
F(AV)
Max. Average Forward Current
* See Fig. 4
I
FSM
Max. Peak One Cycle Non-Repetitive
Surge Current * See Fig. 6
1.1
A
50% duty cycle @ T
C
= 75°C, rectangular wave form
225
5μs Sine or 3μs Rect. pulse
35
10ms Sine or 6ms Rect. pulse
E
AS
I
AR
Non-Repetitive Avalanche Energy
3.0
mJ
T
J
= 25 °C, I
AS
= 1.0 Amps, L = 6 mH
Current decaying linearly to zero in 1 μsec
Frequency limited by T
J
max. V
A
= 1.5 x V
R
typical
Repetitive Avalanche Current
1.0
A
Absolute Maximum Ratings
Following any rated
load condition and with
rated V
RRM
applied
A
Parameters
11DQ..
Units
Conditions
<
thermal runaway condition for a diode on its own heatsink
Rth( j-a)
(*) dPtot
dTj
1
相關(guān)PDF資料
PDF描述
11DQ06 DIODE SILICON, RECTIFIER DIODE, DO-204AL, DO-41, 2 PIN, Rectifier Diode
11DQ10 DIODE 1.1 A, 100 V, SILICON, RECTIFIER DIODE, DO-204AL, PLASTIC, DO-41, 2 PIN, Rectifier Diode
125NQ015PBF DIODE 120 A, 15 V, SILICON, RECTIFIER DIODE, D-67, HALF PACK-1, Rectifier Diode
15CTQ040PBF DIODE 15 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB, LEAD FREE, PLASTIC, TO-220, 3 PIN, Rectifier Diode
15CTQ045PBF DIODE 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB, LEAD FREE, PLASTIC, TO-220, 3 PIN, Rectifier Diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
11DQ04PBF 制造商:Vishay 功能描述:Bulk
11DQ04TR 功能描述:DIODE SCHOTTKY 40V 1.1A DO-41 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 單二極管/整流器 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 二極管類型:標(biāo)準(zhǔn) 電壓 - (Vr)(最大):50V 電流 - 平均整流 (Io):6A 電壓 - 在 If 時(shí)為正向 (Vf)(最大):1.4V @ 6A 速度:快速恢復(fù) = 200mA(Io) 反向恢復(fù)時(shí)間(trr):300ns 電流 - 在 Vr 時(shí)反向漏電:15µA @ 50V 電容@ Vr, F:- 安裝類型:底座,接線柱安裝 封裝/外殼:DO-203AA,DO-4,接線柱 供應(yīng)商設(shè)備封裝:DO-203AA 包裝:散裝 其它名稱:*1N3879
11DQ05 功能描述:DIODE SCHOTTKY 50V 1.1A DO-41 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 單二極管/整流器 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 二極管類型:標(biāo)準(zhǔn) 電壓 - (Vr)(最大):50V 電流 - 平均整流 (Io):6A 電壓 - 在 If 時(shí)為正向 (Vf)(最大):1.4V @ 6A 速度:快速恢復(fù) = 200mA(Io) 反向恢復(fù)時(shí)間(trr):300ns 電流 - 在 Vr 時(shí)反向漏電:15µA @ 50V 電容@ Vr, F:- 安裝類型:底座,接線柱安裝 封裝/外殼:DO-203AA,DO-4,接線柱 供應(yīng)商設(shè)備封裝:DO-203AA 包裝:散裝 其它名稱:*1N3879
11DQ05_12 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Schottky Rectifier, 1.1 A
11DQ05-M3 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Schottky Rectifier, 1.1 A