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參數(shù)資料
| 型號： | 1150MP |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | 150 Watts, 50 Volts, Class C Avionics 1025 - 1150 MHz |
| 中文描述： | 150瓦，50伏特，C類航空電子1025至1150年兆赫 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 179K |
| 代理商： | 1150MP |
1150MP
150 Watts, 50 Volts, Class C
Avionics 1025 - 1150 MHz
GENERAL DESCRIPTION
The 1150MP is a COMMON BASE bipolar transistor. It is designed for pulsed
systems in the frequency band 1025-1150 MHz. The device has gold thin-film
metallization for proven highest MTTF. The transistor includes input prematch for
broadband capability. Low thermal resistance package reduces junction
temperature, extends life.
CASE OUTLINE
55FW-1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C
2
250 Watts Peak
Maximum Voltage and Current
BVces Collector to Emitter Voltage 60 Volts
BVebo Emitter to Base Voltage 4.0 Volts
Ic Collector Current 6.0 Amps Peak
Maximum Temperatures
Storage Temperature - 65 to +150
o
C
Operating Junction Temperature + 200
o
C
ELECTRICAL CHARACTERISTICS @ 25
°
C
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
P
OUT
P
IN
P
G
η
c
VSWR
Power Out
Power Input
Power Gain
Efficiency
Load Mismatch Tolerance
F= 1025-1150 MHz
Vcc = 50 Volts
PW = 10
μ
sec, DF = 1%
F = 1090 MHz
140
7.0
35
150
7.5
38
W
W
dB
%
30
10:1
FUNCTIONAL CHARACTERISTICS @ 25
°
C
BVebo
BVces
Hfe
Cob
θ
jc
2
Note 1: At rated output power and pulse conditions
2: At rated pulse conditions
Initial Issue June, 1994
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC Current Gain
Output Capacitance
Thermal Resistance
Ie = 1 mA
Ic = 10mA
Vce = 5V, Ic = 500 mA
Vcb = 50 V, f = 1 MHz
Tc=25oC
3.5
65
15
V
V
pF
o
C/W
120
16
0.6
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at
www.advancedpower.com
or contact our factory direct.
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| 1151 | 功能描述:電纜固定件和配件 SR 5N-4 WHITE RoHS:否 制造商:Heyco 類型:Cable Grips, Liquid Tight 材料:Nylon 顏色:Black 安裝方法:Cable 最大光束直徑:11.4 mm 抗拉強度: |
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