參數(shù)資料
型號(hào)： 1104E85M00000AA
廠商： VECTRON INTERNATIONAL
元件分類： XO, clock
英文描述： CRYSTAL OSCILLATOR, CLOCK, 85 MHz, ACMOS OUTPUT
封裝： PLASTIC, FLAT PACKAGE-20
文件頁(yè)數(shù)： 16/22頁(yè)
文件大小： 468K
代理商： 1104E85M00000AA
SIZE
CODE IDENT NO.
UNSPECIFIED TOLERANCES
DWG NO.
REV.
SHEET
A
00136
N/A
OS-68338
K
3
3.2
Item Identification. External packaging choices are of metal flatpacks, DIP’s and ceramic J-
lead 9x14mm and LCC’s with either TTL or ACMOS logic output. Unique Model Number
Series’ are utilized to identify device package configurations and output logic as listed in Table
1.
3.3
Absolute Maximum Ratings.
a. Supply Voltage Range (VCC):
-0.5Vdc to +7.0Vdc
b. Storage Temperature Range (TSTG):
-65°C to +125°C
c. Junction Temperature (TJ):
+175°C
d. Lead Temperature (soldering, 10 seconds):
+300°C
e. Output Source/Sink Current
±70 mA
3.4
Design, Parts, Materials and Processes, Assembly, Inspection and Test.
3.4.1
Design. The ruggedized designs implemented for these devices are proven in military and
space applications under extreme environments. Designs utilize 4-point crystal mounting in
compliment with Established Reliability (MIL-ER) componentry. When specified, radiation
hardening up to 100krad(Si) (RHA level R) can be included without altering the device’s
internal topography.
3.4.1.1 Design and Configuration Stability. Barring changes to improve performance by reselecting
passive chip component values to offset component tolerances, there will not be fundamental
changes to the design or assembly or parts, materials and processes after first product delivery
of that item without written approval from the procuring activity.
3.4.1.2 Environmental Integrity. Designs have passed the environmental qualification levels of MIL-
PRF-55310. These designs have also passed extended dynamic levels of at least:
Sine Vibration: MIL-STD-202, Method 204, Condition G (30g pk.)
Random Vibration: MIL-STD-202, Method 214, Condition II-J (43.92g rms)
Mechanical Shock: MIL-STD-202, Method 213, Condition F (1500g, 0.5ms)
3.4.2
Prohibited Parts, Materials and Processes. The items listed are prohibited for use in high
reliability devices produced to this specification.
a. Gold metallization of package elements without a barrier metal.
b. Zinc chromate as a finish.
c. Cadmium, zinc, or pure tin external or internal to the device.
d. Plastic encapsulated semiconductor devices.
e. Ultrasonically cleaned electronic parts.
f. Heterojunction Bipolar Transistor (HBT) technology.
g. ‘getter’ materials
3.4.3
Assembly. Manufacturing utilizes standardized procedures, processes and verification
methods to produce MIL-PRF-55310 Class S / MIL-PRF-38534 Class K equivalent devices.
MIL-PRF-38534 Group B Option 1 in-line inspection is included on radiation hardened part
numbers to further verify lot pedigree. Traceability of all components and production lots are
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