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參數(shù)資料
| 型號： | 10MQ100NTR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 1.5 A, 100 V, SILICON, RECTIFIER DIODE |
| 封裝： | SIMILAR TO D-64, SMA, 2 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 240K |
| 代理商： | 10MQ100NTR |
10MQ100N
Bulletin PD-20520 rev. M 0
7/04
2
www.irf.com
Part number
10MQ100N
V
R
Max. DC Reverse Voltage (V)
V
RWM Max. Working Peak Reverse Voltage (V)
100
Voltage Ratings
V
FM
Max. Forward Voltage Drop
(1)
0.78
V
@ 1A
* See Fig. 1
0.85
V
@ 1.5A
0.63
V
@ 1A
0.68
V
@ 1.5A
I
RM
Max. Reverse Leakage Current (1)
0.1
mA
T
J =
25 °C
* See Fig. 2
1
mA
T
J = 125 °C
V
F(TO) Threshold Voltage
0.52
V
T
J = TJ max.
r
t
Forward Slope Resistance
78.4
m
C
T
Typical Junction Capacitance
38
pF
V
R = 10VDC, TJ = 25°C, test signal = 1Mhz
LS
Typical Series Inductance
2.0
nH
Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change
10000
V/s
(Rated VR)
T
J =
25 °C
T
J = 125 °C
V
R = rated VR
Electrical Specifications
Parameters
10MQ Units
Conditions
(1) Pulse Width < 300s, Duty Cycle < 2%
T
J
Max. Junction Temperature Range (*) - 55 to 150
°C
Tstg Max. Storage Temperature Range
- 55 to 150
°C
R
thJA Max. Thermal Resistance Junction
80
°C/W DC operation
to Ambient
wt
Approximate Weight
0.07(0.002) g (oz.)
Case Style
SMA
Similar D-64
Device Marking
IR1J
Thermal-Mechanical Specifications
Parameters
10MQ Units
Conditions
Absolute Maximum Ratings
I
F(AV) Max. Average Forward Current
1.5
A
50% duty cycle @ T
L = 126 °C, rectangular wave form.
* See Fig. 4
OnPCboard9mm2island(.013mmthickcopperpad area)
I
FSM
Max. Peak One Cycle Non-Repetitive
120
5s Sine or 3s Rect. pulse
Surge Current * See Fig. 6, T
J= 25°C
30
10ms Sine or 6ms Rect. pulse
E
AS
Non-Repetitive Avalanche Energy
1.0
mJ
T
J = 25 °C, IAS = 0.5A, L = 8mH
I
AR
Repetitive Avalanche Current
0.5
A
Parameters
10MQ Units
Conditions
A
Following any rated
load condition and
with rated V
RRM applied
<
thermal runaway condition for a diode on its own heatsink
(*) dPtot
1
dTj
Rth( j-a)
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