- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄246261 > 10MQ040NTRPBF 1.5 A, 40 V, SILICON, RECTIFIER DIODE PDF資料下載
參數(shù)資料
| 型號： | 10MQ040NTRPBF |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 1.5 A, 40 V, SILICON, RECTIFIER DIODE |
| 封裝： | LEAD FREE, SMA, SIMILAR TO D-64, 2 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 163K |
| 代理商： | 10MQ040NTRPBF |
10MQ040NPbF
Bulletin PD-20772 rev. A 07/04
2
www.irf.com
V
FM
Max. Forward Voltage Drop
(1)
0.54
V
@ 1A
* See Fig. 1
0.62
V
@ 1.5A
0.49
V
@ 1A
0.56
V
@ 1.5A
I
RM
Max. Reverse Leakage Current (1)
0.5
mA
T
J =
25 °C
* See Fig. 2
26
mA
T
J = 125 °C
V
F(TO) Threshold Voltage
0.36
V
T
J = TJ max.
r
t
Forward Slope Resistance
104
m
C
T
Typical Junction Capacitance
38
pF
V
R = 10VDC, TJ = 25°C, test signal = 1Mhz
L
S
Typical Series Inductance
2.0
nH
Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change
10000
V/s
(Rated VR)
Part number
10MQ040NPbF
VR
Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
40
Voltage Ratings
Absolute Maximum Ratings
T
J =
25 °C
T
J = 125 °C
V
R = rated VR
Electrical Specifications
Parameters
10MQ Units
Conditions
(1) Pulse Width < 300s, Duty Cycle < 2%
T
J
Max. Junction Temperature Range (*) - 55 to 150
°C
T
stg
Max. Storage Temperature Range
- 55 to 150
°C
R
thJA Max. Thermal Resistance Junction
80
°C/W DC operation
to Ambient
wt
Approximate Weight
0.07(0.002) g (oz.)
Case Style
SMA
Similar D-64
Device Marking
IR1F
Thermal-Mechanical Specifications
Parameters
10MQ Units
Conditions
I
F(AV) Max. Average Forward Current
1.5
A
50% duty cycle @ TL = 123 °C, rectangular wave form.
* See Fig. 4
OnPCboard9mm2island(.013mmthickcopperpad area)
I
FSM
Max. Peak One Cycle Non-Repetitive
120
5s Sine or 3s Rect. pulse
Surge Current * See Fig. 6
30
10ms Sine or 6ms Rect. pulse
E
AS
Non-Repetitive Avalanche Energy
3.0
mJ
T
J = 25 °C, IAS = 1A, L = 6mH
I
AR
Repetitive Avalanche Current
1.0
A
Parameters
10MQ Units
Conditions
A
Following any rated
load condition and
with rated V
RRM applied
<
thermal runaway condition for a diode on its own heatsink
(*) dPtot
1
dTj
Rth( j-a)
相關PDF資料 |
PDF描述 |
|---|---|
| 100JB8L | 10 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE |
| 1SS106TD | SILICON, MIXER DIODE, DO-35 |
| 1SS108TD | SILICON, MIXER DIODE, DO-35 |
| 1N5243BT-72 | 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 |
| 1N5233 | 6 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 10MQ040NTRPBF | 制造商:International Rectifier 功能描述:Schottky Rectifier |
| 10MQ060-M3 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Schottky Rectifier, 1 A |
| 10MQ060N | 功能描述:肖特基二極管與整流器 2.1 Amp 60 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| 10MQ060NPBF | 功能描述:DIODE SCHOTTKY 60V 1.5A D64 RoHS:是 類別:分離式半導體產(chǎn)品 >> 單二極管/整流器 系列:- 標準包裝:100 系列:- 二極管類型:標準 電壓 - (Vr)（最大）:50V 電流 - 平均整流 (Io):6A 電壓 - 在 If 時為正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢復 = 200mA（Io） 反向恢復時間(trr):300ns 電流 - 在 Vr 時反向漏電:15µA @ 50V 電容@ Vr, F:- 安裝類型:底座，接線柱安裝 封裝/外殼:DO-203AA，DO-4，接線柱 供應商設備封裝:DO-203AA 包裝:散裝 其它名稱:*1N3879 |
| 10MQ060NPBF_10 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Schottky Rectifier, 2.1 A |
發(fā)布緊急采購，3分鐘左右您將得到回復。