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參數(shù)資料
| 型號(hào)： | 10BQ100TRPBF |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Diode Schottky 100V 1A 2-Pin SMB T/R |
| 中文描述： | Schottky (Diodes & Rectifiers) 1.0 Amp 100 Volt |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 108K |
| 代理商： | 10BQ100TRPBF |
Document Number: 94114
Revision: 03-Mar-10
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
1
Schottky Rectifier, 1 A
VS-10BQ100PbF
Vishay High Power Products
FEATURES
Small foot print, surface mountable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long
term reliability
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
Compliant to RoHS directive 2002/95/EC
Designed and qualified for industrial level
DESCRIPTION
The VS-10BQ100PbF surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and very small foot prints on PC boards. Typical
applications are in disk drives, switching power supplies,
converters, freewheeling diodes, battery charging, and
reverse battery protection.
PRODUCT SUMMARY
I
F(AV)
V
R
1.0 A
100 V
S
MB
Cathode
Anode
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
UNITS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
Rectangular waveform
1.0
A
100
V
t
p
= 5 μs sine
1.0 Apk, T
J
= 125 °C
Range
780
A
0.62
V
- 55 to 175
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VS-10BQ100PbF
UNITS
Maximum DC reverse voltage
V
R
100
V
Maximum working peak reverse voltage
V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average forward current
I
F(AV)
50 % duty cycle at T
L
= 152 °C, rectangular waveform
1.0
A
Maximum peak one cycle
non-repetitive surge current
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated
load condition and with
rated V
RRM
applied
780
A
10 ms sine or 6 ms rect. pulse
38
Non-repetitive avalanche energy
E
AS
T
J
= 25 °C, I
AS
= 0.5 A, L = 8 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
1.0
mJ
Repetitive avalanche current
I
AR
0.5
A
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