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參數(shù)資料
| 型號(hào)： | 1014-2 |
| 英文描述： | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 500MA I(C) | FO-229 |
| 中文描述： | 晶體管|晶體管|叩| 50V五（巴西）總裁| 500mA的一（c）|佛229 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 102K |
| 代理商： | 1014-2 |
Ghz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
1014 - 2
2 Watt - 28 Volts, Class C
Microwave 1000 - 1400 MHz
GENERAL DESCRIPTION
The 1014-2 is a COMMON BASE transistor capable of providing 2 Watts of
Class C, RF Output Power over the band 1000-1400 MHz. This transistor is
designed for Microwave Broadband Class C amplifier applications. It includes
Input prematching and utilizes gold metalization and diffused ballasting to
provide high reliagility and supreme ruggedness.
CASE OUTLINE
55LT, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 9.7 Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage 50 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 0.5 A
Maximum Temperatures
Storage Temperature - 65 to +150 C
Operating Junction Temperature +200 C
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg
η
c
VSWR
1
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
Vcb = 28 Volts
Power Out
F =1000-1400 MHz
As Above
Pout = 2 Watts
2
Watt
Watt
7.5
dB
%
45
0.35
10:1
BVces
BVebo
Icbo
h
Cob
θ
jc
Collector to Emitter Breakdown
Emitter to Base Breakdown
Collector to Base Current
Current Gain
Output Capacitance
Thermal Resistance
Ic = 20 mA
Ie = 5 mA
Vcb = 28 Volts
Vce = 28 V, Ic = 100 mA
Vcb = 25 V, f = 1 MHz
Tc = 25 C
50
3.5
Volts
Volts
mA
0.5
100
4.5
18
10
pF
C/W
o
o
Rev A, Feb 1997
Ghz TECHNOLOGY, INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT
THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
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