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參數(shù)資料
| 型號： | 1.5SMC30A-HE3/57T |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMC, 2 PIN |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 100K |
| 代理商： | 1.5SMC30A-HE3/57T |
Document Number 88303
08-Sep-06
www.vishay.com
3
1.5SMC Series
Vishay General Semiconductor
Note:
(1) Mounted on minimum recommended pad layout
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Thermal resistance junction to ambient air (1)
RθJA
75
°C/W
Thermal resistance junction to leads
RθJL
15
°C/W
ORDERING INFORMATION
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
1.5SMC6.8A-E3/57T
0.211
57T
850
7" Diameter Plastic Tape & Reel
1.5SMC6.8A-E3/9AT
0.211
9AT
3500
13" Diameter Plastic Tape & Reel
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Power or Current versus Initial Junction
Temperature
0.1
1
10
100
0.31 x 0.31" (8.0 x 8.0 mm)
Copper Pad Areas
0.1 s
1.0 s
10 s
100 s
1.0 ms
10 ms
P
PPM
-
P
eak
P
u
lse
P
o
w
er
(k
W
)
td - Pulse Width (s)
0
255075
100
75
50
25
0
125
150
175
200
TJ - Initial Temperature (°C)
Pe
a
k
P
u
lse
P
o
w
er
(P
PP
)or
C
u
rrent
(I
PP
)
Der
ating
in
P
e
rcentage
,
%
Figure 3. Pulse Waveform
Figure 4. Typical Junction Capacitance Uni-Directional
0
50
100
150
td
0
1.0
2.0
3.0
4.0
IPPM
-
P
eak
P
u
lse
C
u
rrent,
%
I
RSM
t - Time (ms)
tr = 10 sec
Peak Value
IPPM
Half Value -
IPPM
IPP
2
10/1000 sec Waveform
as defined by R.E.A.
Tj = 25 °C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50 % of IPPM
10
100
1000
10000
20000
10
1
100
400
Uni-Directional
Bi-Directional
Tj = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Measured at
Zero Bias
VR, Measured
at Stand-off
Voltage VWM
C
J,
J
u
nction
Capacitance
(pF)
VWM - Reverse Stand-off Voltage (V)
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