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參數(shù)資料
| 型號(hào)： | 08C02SS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 800 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SSFP, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 27K |
| 代理商： | 08C02SS |
08C02SS
No.8513-1/4
Applications
Low-frequency Amplifer, high-speed switching, DC / DC converter, muting circuit.
Features
Large current capacitance.
Low collector-to-emitter saturation voltage (resistance): RCE(sat) typ=240m [IC=1A, IB=50mA].
Ultrasmall package facilitates miniaturization in end products.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
15
V
Collector-to-Emitter Voltage
VCEO
8V
Emitter-to-Base Voltage
VEBO
5V
Collector Current
IC
0.8
A
Collector Current (Pulse)
ICP
1.6
A
Collector Dissipation
PC
Mounted on a glass epoxy board (20!30!1.6mm)
200
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=12V, IE=0A
100
nA
Emitter Cutoff Current
IEBO
VEB=4V, IC=0A
100
nA
DC Current Gain
hFE
VCE=2V, IC=50mA
300
800
Gain-Bandwidth Product
fT
VCE=2V, IC=50mA
440
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz
6
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=30mA, IB=0.6mA
17
40
mV
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=400mA, IB=20mA
110
250
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=400mA, IB=20mA
0.9
1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=10A, IE=0A
15
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, RBE=∞
8V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=10A, IC=0A
5
V
Marking : YT
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN8513
90505EA MS IM TA-100372
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
08C02SS
NPN Epitaxial Planar Silicon Transistor
Low-Frequency General-Purpose
Amplifier Applications
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