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參數(shù)資料
| 型號(hào)： | 0809LD120 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Compant High-Insulation Power Relay, Polarized, 10A |
| 中文描述： | 120瓦，28V的，1 GHz的LDMOS的場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 17K |
| 代理商： | 0809LD120 |
R.0.2P.991602-BEHRE
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE
WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
0809LD120
120 WATT, 28V, 1 GHz
LDMOS FET
PRELIM I N A RY I S S U E
GENERAL DESCRIPTION
The 0809LD120 is a common source N-Channel enhancement mode lateral
MOSFET capable of providing 120 Watts of RF power from HF to 1 GHz. The
device is nitride passivated and utilizes gold metallization to ensure high
reliability and supreme ruggedness.
CASE OUTLINE
55QV
Common Source
ABSOLUTE MAXIMUM RATINGS
Power Dissipation
Device Dissipation @25
°C (P
d)
300 W
Thermal Resistance (
θ
JC).6°C/W
Voltage and Current
Drain-Source (VDSS)
65V
Gate-Source (VGS)
±20V
Temperatures
Storage Temperature
-65 to +200
°C
Operating Junction Temperature
+200
°C
ELECTRICAL CHARACTERISTICS @ 25
°°°°C PER SIDE
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ΒV
dss
Drain-Source Breakdown
Vgs = 0V, Id = 2ma
65
70
V
Idss
Drain-Source Leakage Current
Vds = 28V, Vgs= 0V
1
A
Igss
Gate-Source Leakage Current
Vgs = 20V, Vds = 0V
1
A
Vgs(th)
Gate Threshold Voltage
Vds = 10V, Id = 100ma
2
4
5
V
Vds(on)
Drain-Source On Voltage
Vgs = 10V, Id = 3A
0.7
V
gFS
Forward Transconductance
Vds = 10V, Id = 3A
2.2
S
Crss
Reverse Transfer Capacitance
Vds = 28V, Vgs = 0V, F = 1 MHz
5
pF
Coss
Output Capacitance
Vds = 28V, Vgs = 0V, F = 1 MHz
60
pF
This part is input matched
.
FUNCTIONAL CHARACTERISTICS @ 25
°°°°C
GPS
Common Source Power Gain
Vds = 28V, Idq = 0.6A,
F = 900MHz, Pout = 120W
13
dB
η
d
Drain Efficiency
Vds = 28V, Idq = 0.6A,
F = 900MHz, Pout = 120W
50
%
IMD3
Intermodulation Distortion,
3
rd Order
Vds = 28V, Idq = 0.6A,
Pout=120W PEP, F1 = 900 MHz,
F2 = 900.1 MHz
-30
dBc
Ψ
Load Mismatch
Vds = 28V, Idq = 0.6A,
F = 900MHz, Pout = 120W
5:1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 0809LD30 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:30 WATT, 28V, 1 GHz LDMOS FET |
| 0809LD30P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:30 WATT, 28V, 1 GHz LDMOS FET |
| 0809LD60 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:60 WATT, 28V, 1 GHz LDMOS FET |
| 0809LD60P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:60 WATT, 28V, 1 GHz LDMOS FET |
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