參數資料
型號: 05NH45
元件分類: 二極管(射頻、小信號、開關、功率)
英文描述: 0.5 A, 1000 V, SILICON, SIGNAL DIODE
封裝: LEAD FREE, 3-3E1A, 2 PIN
文件頁數: 1/4頁
文件大?。?/td> 212K
代理商: 05NH45
05NH45
2006-11-07
1
Unit: mm
TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE
05NH45
SWITCHING MODE POWER SUPPLY APPLICATIONS
Repetitive Peak Reverse Voltage
: VRRM = 1000V
Average Forward Current
: IF (AV) = 0.5A
Very Fast Reverse Recovery Time : trr = 200ns (Max)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
VRRM
1000
V
Average Forward Current
(Ta = 25°C)
IF (AV)
0.5
A
20 (50Hz)
Peak One Cycle Surge Forward
Current (NonRepetitive)
IFSM
22 (60Hz)
A
Junction Temperature Range
Tj
40~150
°C
Storage Temperature Range
Tstg
40~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN
TYP.
MAX
UNIT
Peak Forward Voltage
VFM
IFM = 0.5A
1.5
V
Repetitive Peak Reverse Current
IRRM
VRRM = 1000V
100
μA
Reverse Recovery Time
trr
IF = 1A, di / dt = 30A / μs
200
ns
Forward Recovery Time
tfr
IF = 1.0A
750
ns
Thermal Resistance
Rth (ja)
Junction to Ambient
75
°C / W
MARKING
Abbreviation Code
Part No.
NH5
05NH45
JEDEC
JEITA
TOSHIBA
33E1A
Weight: 0.225g
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
NH5
Part No. (or abbreviation code)
相關PDF資料
PDF描述
05NH46TPB5 0.5 A, 1000 V, SILICON, SIGNAL DIODE
05NH46TPA2 0.5 A, 1000 V, SILICON, SIGNAL DIODE
05NH46TPA3 0.5 A, 1000 V, SILICON, SIGNAL DIODE
05NU41TPA2 0.5 A, 1000 V, SILICON, SIGNAL DIODE
05NU41TPB2 0.5 A, 1000 V, SILICON, SIGNAL DIODE
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