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參數(shù)資料
| 型號(hào)： | 0405-500L |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF: 400-450 MHz, Class C, Common Emitter-Pulsed; P(out) (W): 500; P(in) (W): 55; Gain (dB): 10; Vcc (V): 32; Pulse Width (µsec): 1100; Duty Cycle (%): 26; Case Style: 55-SL |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CASE 55SL, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 135K |
| 代理商： | 0405-500L |
0405-500L Rev A
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
Microsemi Corp. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 TEL. 408-986-8031 FAX 408-869-2324
.
GENERAL DESCRIPTION
The 0405-500L is an internally matched, COMMON EMITTER transistor
capable of providing 500 Watts of pulsed RF output power in a push-pull
configuration at one thousand and one hundred microsecond pulse width
twenty –six percent duty factor across the frequency band 400-450 MHz. This
hermetically sealed transistor is specifically designed for medium pulse radar
applications. It utilizes gold metallization and diffused emitter ballasting to
provide high reliability and supreme ruggedness.
CASE OUTLINE
55SL, STYLE 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
oC1
800 Watts
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
65 Volts
BVebo
Emitter to Base Voltage
3.5 Volts
Ic
Collector Current
50 Amps
Maximum Temperatures
Storage Temperature
- 65 to + 200
oC
Operating Junction Temperature
+ 200
oC
ELECTRICAL CHARACTERISTICS @ 25
OC
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pg
ηηηηc
Pd
VSWR
1
Power Out (Note 2) Pulsed
Power Gain
Collector Efficiency
Pulse Amplitude Droop
Load Mismatch Tolerance
F = 400-450 MHz
Vcc = 32 Volts,
Pulse Width = 1100
s
Duty = 26 %
As above
F = 425MHz, Po =500W
500
9.5
50
10
0.6
2:1
Watts
dB
%
dB
FUNCTIONAL CHARACTERISTICS @ 25
OC
Bvces
Ices
Iebo
Hfe
θθθθjc2
Collector to Emitter Breakdown
Collector to Emitter Leakage
Emitter to Base Leakage Current
DC Current Gain
Thermal Resistance
Ic = 150 mA
Vce = 36 Volts
Veb = 1.0 Volts
Vce = 5 V, Ic = 1000mA
Rated Pulse Condition
65
8
35
25
0.33
Volts
mA
oC/W
Issue Nov. 2006
Note 1: Pulse width = 1100 us, duty = 26%
Note 2: Power Input = 55 Watts Peak Pulsed(Max)
0405-500L
500 Watts - 32Volts, 1100
s, 26%
UHF Pulsed Radar 400 - 450 MHz
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