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參數(shù)資料
| 型號(hào)： | 015DZ6.8 |
| 元件分類： | 齊納二極管 |
| 英文描述： | 6.8 V, 0.15 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 封裝： | 1-1L1A, FSC, 2 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 124K |
| 代理商： | 015DZ6.8 |
015DZ6.8
2008-10-10
1
TOSHIBA Diode Silicon Epitaxial Planar Type
015DZ6.8
Constant-Voltage Regulation Applications
Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Power dissipation
P
150*
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
*: Mounted on a glass epoxy circuit board of 20 mm × 20 mm,
pad dimension of 4 mm × 4 mm.
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc.).
Pad Dimensions (Reference) Unit: mm
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Zener voltage
VZ
IZ = 5 mA
6.60
―
7.02
V
Reverse current
IR
VR = 5 V
―
0.5
μA
Dynamic Impedance
ZZ
IZ = 5 mA
―
30
Ω
Knee Dynamic Impedance
ZZK
IZ = 0.5 mA
―
150
Ω
Marking
Equivalent Circuit (Top View)
0.6±0.05
0.
8±
0.
05
0.
1
カソ
ー
ド
マ
ー
ク
0.
1
0.2
±0.05
A
0.48
+0.02
-0.03
1.
0±
0.
05
0.1±0.05
0.
07
M
A
CA
T
HO
DE
M
A
R
K
0.6±0.05
0.
8±
0.
05
0.
1
カソ
ー
ド
マ
ー
ク
0.
1
0.2
±0.05
A
0.48
+0.02
-0.03
1.
0±
0.
05
0.1±0.05
0.
07
M
A
CA
T
HO
DE
M
A
R
K
JEDEC
―
JEITA
―
TOSHIBA
1-1L1A
Weight: 0.6 mg (typ.)
Unit in mm
fSC
0.21
0.26
0.85
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