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參數(shù)資料
| 型號(hào)： | μPG110B |
| 廠商： | NEC Corp. |
| 英文描述： | 2 to 8 GHz WIDE BAND AMPLIFIER(2-8GHz 寬帶放大器) |
| 中文描述： | 2至8GHz寬帶放大器（2 - 8GHz的寬帶放大器） |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 45K |
| 代理商： | ΜPG110B |
1995
DATA SHEET
GaAs INTEGRATED CIRCUIT
μ
PG110B
2 to 8 GHz WIDE BAND AMPLIFIER
DESCRIPTION
The
μ
PG110B is a GaAs monolithic integrated circuit designed as a wide band amplifier from 2 GHz to 8 GHz.
The device is most suitable for the gain stage required high gain characteristic of the microwave communication
system and the measurement equipment.
FEATURES
Ultra wide band: 2 to 8 GHz
High gain: 15 dB TYP. @f = 2 to 8 GHz
Medium power: +14 dBm TYP. @f = 2 to 8 GHz
Input/Output impedance matched to 50
Hermetically sealed package assures high reliability
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Drain Voltage
Input Voltage
Input Power
Total Power Dissipation
Operating Case Temperature
Storage Temperature
V
DD
V
IN
P
in
P
tot
T
C
T
stg
+10
V
V
–5 to +0.6
+10
1.5
–65 to +125
–65 to +175
dBm
W
C
C
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Power Gain
Gp
12
15
dB
V
DD
= +8 V
f = 2.0 to 8.0 GHz
Gain Flatness
G
L
±
1.5
dB
Input Return Loss
RL
in
6
10
dB
Output Return Loss
RL
out
7
10
dB
Isolation
ISL
30
40
dB
P
out
at 1 dB G.C.P.
P
O(1 dB)
10
14
dBm
Supply Current
I
DD
65
135
180
mA
G.C.P. : Gain Compression Point
Take the heat radiation into account sufficiently to prevent the case temperature from exceeding the absolute
maximum rating.
Document No. P10869EJ2V0DS00 (2nd edition)
(Previous No. ID-2235)
Date Published October 1995 P
Printed in Japan
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