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參數(shù)資料
| 型號： | μPD23C16040AL |
| 廠商： | NEC Corp. |
| 英文描述： | 16M-Bit MASK-Programmable ROM(16M位 掩膜可編程ROM) |
| 中文描述： | 1,600位掩膜可編程ROM（1,600位掩膜可編程光盤） |
| 文件頁數(shù)： | 1/28頁 |
| 文件大?。?/td> | 260K |
| 代理商： | ΜPD23C16040AL |
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1998
MOS INTEGRATED CIRCUIT
μ
PD441000L-X
1M-BIT CMOS STATIC RAM
128K-WORD BY 8-BIT
EXTENDED TEMPERATURE OPERATION
PRELIMINARY DATA SHEET
Document No. M13714EJ3V0DS00 (3rd edition)
Date Published October 1998 NS CP (K)
Printed in Japan
The information in this document is subject to change without notice.
The mark
shows major revised points.
Description
The
μ
PD441000L-X is a high speed, low power, 1,048,576 bits (131,072 words by 8 bits) CMOS static RAM.
The
μ
PD441000L-X has two chip enable pins (/CE1, CE2) to extend the capacity.
The
μ
PD441000L-X is packed in 32-pin plastic TSOP (I) and 36-pin plastic FPBGA.
Features
131,072 words by 8 bits organization
Fast access time: 70, 85, 100, 120, 150 ns (MAX.)
Low voltage operation (B version: V
CC
= 2.7 to 3.6 V, C version: V
CC
= 2.2 to 3.6 V, D version: V
CC
= 1.8 to 3.6 V)
Operating ambient temperature: T
A
= –25 to +85 °C
Output Enable input for easy application
Two Chip Enable inputs: /CE1, CE2
Supply current
Part number
Access time
ns (MAX.)
Operating supply
voltage
V
Operating ambient
temperature
°
C
At operating
mA (MAX.)
At standby
μ
A (MAX.)
At data retention
μ
A (MAX.)
μ
PD441000L-BxxX
70, 85, 100
2.7 to 3.6
25 to +85
25
2
2
μ
PD441000L-CxxX
100, 120
2.2 to 3.6
μ
PD441000L-DxxX
120, 150
1.8 to 3.6
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