參數(shù)資料
型號(hào)： μPA826TC
廠商： NEC Corp.
英文描述： NPN Silicon RF Twin Transistor(NPN射頻晶體管)
中文描述： NPN硅射頻雙晶體管（npn型射頻晶體管）
文件頁數(shù)： 1/12頁
文件大?。?/td> 66K
代理商： ΜPA826TC
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
NPN SILICON RF TWIN TRANSISTOR
μ
PA826TC
NPN SILICON EPITAXIAL TWIN TRANSISTOR
(WITH BUILT-IN 2
×
2SC5010)
FLAT-LEAD 6-PIN THIN -TYPE ULTRA SUPER MINIMOLD
Document No. P14553EJ1V0DS00 (1st edition)
Date Published November 1999 N CP(K)
Printed in Japan
DATA SHEET
1999
FEATURES
Low noise and high gain
Operable at low voltage
Small feedback capacitance: C
re
= 0.4 pF TYP.
Flat-lead 6-pin thin-type ultra super minimold package
Built-in 2 transistors (2
×
2SC5010)
ORDERING INFORMATION
Part Number
Package
Quantity
Supplying Form
μ
PA826TC
Loose products
(50 pcs)
μ
PA826TC-T1
Flat-lead 6-pin
thin-type ultra
super minimold
Taping products
(3 kp/reel)
Embossed tape 8 mm wide.
Pin 6 (Q1 Base), Pin 5 (Q2 Emitter), Pin 4 (Q2 Base) face to perforation
side of the tape.
Remark
To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:
μ
PA826TC. Unit sample quantity is 50 pcs).
ABSOLUTE MAXIMUM RATINGS (T
A
= +25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
V
CBO
9
V
Collector to Emitter Voltage
V
CEO
6
V
Emitter to Base Voltage
V
EBO
2
V
Collector Current
I
C
30
mA
Total Power Dissipation
P
T
Note
180 in 1 element
230 in 2 elements
mW
Junction Temperature
T
j
150
°C
Storage Temperature
T
stg
65 to 150
°C
Note
Mounted on 1.08 cm
2
×
1.0 mm glass epoxy substrate.
Caution Electro-static sensitive devices
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