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參數(shù)資料
| 型號(hào)： | μPA813T |
| 廠商： | NEC Corp. |
| 英文描述： | NPN Silicon Epitaxial Transistor(NPN 外延晶體管) |
| 中文描述： | NPN硅外延晶體管（npn型外延晶體管） |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 46K |
| 代理商： | ΜPA813T |
1995
PRELIMINARY DATA SHEET
PACKAGE DRAWINGS
(Unit: mm)
SILICON TRANSISTOR
μ
PA813T
μ
PA813T has built-in 2 transistors which were developed for UHF.
FEATURES
High f
T
f
T
= 5.5 GHz TYP. (@V
CE
= 5 V, I
C
= 5 mA, f = 1 GHz)
Small Collector Capacitance
C
ob
= 0.7 pF TYP. (@V
CB
= 5 V, I
E
= 0, f = 1 MHz)
A Surface Mounting Package Adopted
Built-in 2 Transistors (2
×
2SC4570)
ORDERING INFORMATION
PART NUMBER
QUANTITY
PACKING STYLE
μ
PA813T
Loose products
(50 PCS)
Embossed tape 8 mm wide. Pin 6 (Q1
Base), Pin 5 (Q1 Emitter), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
μ
PA813T-T1
Taping products
(3 KPCS/Reel)
Remark
If you require an evaluation sample, please contact an NEC Sales
Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
V
CBO
20
V
Collector to Emitter Voltage
V
CEO
12
V
Emitter to Base Voltage
V
EBO
3
V
Collector Current
I
C
30
mA
Total Power Dissipation
P
T
120 in 1 element
160 in 2 elements
Note
mW
Junction Temperature
T
j
125
C
Storage Temperature
T
stg
–55 to +125
C
Note
90 mW must not be exceeded in 1 element.
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2
×
2SC4570) SMALL MINI MOLD
Document No. P11466EJ 1V0DS00 (1st edition)
Date Published J une 1996 P
Printed in J apan
The information in this document is subject to change without notice.
PIN CONFIGURATION (Top View)
PIN CONNECTIONS
1. Collector (Q1)
2. Base (Q2)
3. Collector (Q2)
4. Emitter (Q2)
5. Emitter (Q1)
6. Base (Q1)
6
5
4
1
2
3
Q
1
Q
2
2.1±0.1
1.25
1
2
3
6
5
4
0
–
+
0
0
1
2
0
0
0
0
–
+
X
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