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參數(shù)資料
| 型號(hào)： | μPA808T |
| 廠商： | NEC Corp. |
| 英文描述： | Low Noise Microwave Amlification NPN Epitaxial Silicon Transistor(應(yīng)用于微波低噪聲放大器的NPN硅外延晶體管) |
| 中文描述： | 低噪聲微波Amlification npn型外延硅晶體管（應(yīng)用于微波低噪聲放大器的npn型硅外延晶體管） |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大?。?/td> | 55K |
| 代理商： | ΜPA808T |
SILICON TRANSISTOR
μ
PA808T
FEATURES
Low Noise
NF = 1.3 dB TYP. @V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
NF = 1.3 dB TYP. @V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
A Super Mini Mold Package Adopted
Built-in 2 Transistors (2
×
2SC5184)
ORDERING INFORMATION
PART NUMBER
QUANTITY
PACKING STYLE
μ
PA808T
Loose products
(50 PCS)
μ
PA808T-T1
Taping products
(3 KPCS/Reel)
Remark
If you require an evaluation sample, please contact an
NEC Sales Representative. (Unit sample quantity is 50
pcs.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
V
CBO
5
V
Collector to Emitter Voltage
V
CEO
3
V
Emitter to Base Voltage
V
EBO
2
V
Collector Current
I
C
30
mA
Total Power Dissipation
P
T
90 in 1 element
180 in 2 elements
Note
mW
Junction Temperature
T
j
150
°
C
Storage Temperature
T
stg
–65 to +150
°
C
Note
110 mW must not be exceeded in 1 element.
Document No. P12154EJ2V0DS00 (2nd edition)
(Previous No. ID-3642)
Date Published November 1996 N
Printed in Japan
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD
2.1±0.1
1.25±0.1
2
1
0
0
0
+
–
1
2
3
6
5
4
X
0
0
0
0
+
–
PACKAGE DRAWINGS
(Unit: mm)
1995
DATA SHEET
6
5
4
1
2
3
Q
1
Q
2
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
PIN CONFIGURATION (Top View)
4. Emitter (Q2)
5. Base (Q2)
6. Base (Q1)
Embossed tape 8 mm wide. Pin 6
(Q1 Base), Pin 5 (Q2 Base), Pin 4
(Q2 Emitter) face to perforation
side of the tape.
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
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