參數(shù)資料
型號(hào)： ZVN4525Z
廠商： ZETEX PLC
元件分類： 小信號(hào)晶體管
英文描述： 250V N-CHANNEL ENHANCEMENT MODE MOSFET
中文描述： 240 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件頁(yè)數(shù)： 4/8頁(yè)
文件大?。?/td> 431K
代理商： ZVN4525Z
ISSUE 1 - MARCH 2001
ZVN4525Z
4
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNI
T
CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
250
285
V
I
D
=1mA, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
35
500
nA
V
DS
=250V, V
GS
=0V
Gate-Body Leakage
I
GSS
±1
±100
nA
V
GS
=
±
40V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
0.8
1.4
1.8
V
I
D
=1mA, V
DS
= V
GS
V
GS
=10V, I
D
=500mA
V
GS
=4.5V, I
D
=360mA
V
GS
=2.4V, I
D
=20mA
Static Drain-Source On-State Resistance (1)
R
DS(on)
5.6
5.9
6.4
8.5
9.0
9.5
Forward Transconductance (3)
g
fs
0.3
475
S
V
DS
=10V,I
D
=0.3A
DYNAMIC
(3)
Input Capacitance
C
iss
72
pF
V
=25 V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
11
pF
Reverse Transfer Capacitance
C
rss
3.6
pF
SWITCHING
(2) (3)
Turn-On Delay Time
t
d(on)
1.25
ns
V
DD
=50V, I
D
=200mA
R
=6.0
, R
=4.4
(refer to test circuit)
Rise Time
t
r
1.70
ns
Turn-Off Delay Time
t
d(off)
11.40
ns
Fall Time
t
f
3.50
ns
Total Gate Charge
Q
g
2.6
3.65
nC
V
DS
=25V,V
=10V,
I
=360mA(refer to
test circuit)
Gate-Source Charge
Q
gs
0.2
0.28
nC
Gate Drain Charge
Q
gd
0.5
0.70
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
SD
0.97
V
T
j
=25°C, I
S
=360mA,
V
GS
=0V
Reverse Recovery Time (3)
t
rr
186
260
ns
T
=25°C, I
=360mA,
di/dt= 100A/
μ
s
Reverse Recovery Charge (3)
Q
rr
34
48
nC
(1) Measured under pulsed conditions. Width=300
μ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
相關(guān)PDF資料
PDF描述
ZVN4525ZTA 250V N-CHANNEL ENHANCEMENT MODE MOSFET
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