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參數(shù)資料
| 型號： | YG835C04R |
| 英文描述： | MAX 7000 CPLD 256 MC 208-RQFP |
| 中文描述： | 肖特基二極管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 60K |
| 代理商： | YG835C04R |
YG835C04R
(40V / 22A TO-22OF15)
SCHOTTKY BARRIER DIODE
Outline Drawings
JEDEC
EIAJ
SC-67
Features
Low VF
Super high speed switching.
High reliability by planer design.
Applications
High speed power switching.
Connection Diagram
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Item
Repetitive peak reverse voltage
Repetitive peak surge reverse voltage
Isolating voltage
Average output current
Suege current
Operating junction temperature
Storage temperature
Symbol
VRRM
VRSM
Viso
IO
IFSM
Tj
Tstg
Conditions
duty=1/2, Tc=95°C
Square wave
Sine wave 10ms
Rating
40
1500
22*
120
+150
-40 to +150
Unit
V
A
°C
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Item
Forward voltage drop **
Reverse current **
Thermal resistance
Symbol
VF
IR
Rth(j-c)
Conditions
IF=6.0A
VR=VRRM
Junction to case
Max.
0.45
15.0
2.5
Unit
V
mA
°C/W
tw=500ns, duty=1/40
Terminals to Case,
AC. 1min.
Mechanical Characteristics
Mounting torque
Weight
Recommended torque
0.3 to 0.5
2.3
N m
g
* Out put current of centertap full wave connection.
1
2
3
** Rating per element
10±0.5
2.54±0.2
0.7±0.2
1.2±0.2
2.7±0.2
0.6
2.7±0.2
4.5±0.2
3.7
±0.2
15
±0.3
2.7
±0.2
13
Min
6.3
3.2
+0.2
-0.1
+0.2
-0
1
3
2
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PDF描述 |
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| YG838C03R | Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 4.0 to 4.4; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| YG835C04RSC-P | 制造商:Fuji Electric 功能描述: |
| YG838C03R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SCHOTTKY BARRIER DIODE |
| YG838C03RSC-P | 制造商:Fuji Electric 功能描述: |
| YG838C04R | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:SCHOTTKY BARRIER DIODE |
| YG838C04RSC-P | 制造商:Fuji Electric 功能描述: |
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