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參數(shù)資料
| 型號(hào)： | YG811S09R |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | SCHOTTKY BARRIER DIODE |
| 中文描述： | 肖特基勢(shì)壘二極管 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 46K |
| 代理商： | YG811S09R |
YG811S09R
(90V / 5A TO-22OF15)
Characteristics
0.1
1
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
o
C
o C
o
C
Tj=150
Tj=125
Tj=100
Tj=25
Forward Characteristic (typ.)
IF
Forward
Current
(A)
VF
Forward Voltage
(V)
0
102030
40506070
8090
100 110
10
-3
10
-2
10
-1
10
0
10
1
10
2
Tj=150
oC
Tj=25
oC
Tj=100
oC
Tj=125
oC
Reverse Characteristic (typ.)
IR
Reverse
Current
(mA)
VR
Reverse Voltage
(V)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
0
1
2
3
4
5
6
7
8
Per 1element
DC
Square wave
λ=180
o
Sine wave
λ=180
o
Square wave
λ=120
o
Square wave
λ=60
o
Forward Power Dissipation
WF
Forward
Power
Dissipation
(W)
Io
Average Forward Current
(A)
360°
Io
0
10
203040
5060
7080
90
100
0
2
4
6
8
10
12
14
16
18
20
Reverse Power Dissipation
α=180
o
DC
PR
Reverse
Power
Dissipation
(W)
VR
Reverse Voltage
(V)
360°
VR
01
234
56
7
8
70
80
90
100
110
120
130
140
150
160
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Square wave
λ=120
o
Square wave
λ=60
o
Square wave
λ=180
o
Sine wave
λ=180
o
DC
Current Derating (Io-Tc)
Tc
Case
Temperature
(
o
C)
Io
Average Output Current
(A)
VR=50V
360°
Io
10
100
10
100
1000
Junction Capacitance Characteristic
(typ.)
Cj
Junction
Capacitance
(pF)
VR
Reverse Voltage
(V)
λ
α
λ
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PDF描述 |
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| YG811S09R | 5 A, 90 V, SILICON, RECTIFIER DIODE |
| YG811S09 | 5 A, 90 V, SILICON, RECTIFIER DIODE, TO-220 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| YG811S09RSC-P | 制造商:Fuji Electric 功能描述: |
| YG812S04R | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:Schottky Barrier Diode |
| YG812S04RSC-P | 制造商:Fuji Electric 功能描述: |
| YG831C03R | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:SCHOTTKY BARRIER DIODE |
| YG831C04R | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:SCHOTTKY BARRIER DIODE |
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