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參數(shù)資料
| 型號： | YG811S06R |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | SCHOTTKY BARRIER DIODE |
| 中文描述： | 肖特基勢壘二極管 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 52K |
| 代理商： | YG811S06R |
YG811S06R
(60V / 5A TO-22OF15)
Characteristics
0.1
1
10
100
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Tj=150
oC
Tj=125
oC
Tj=100
oC
Tj=25
oC
Forward Characteristic
(typ.)
IF
Forward
Current
(A)
VF
Forward Voltage
(V)
0
102030
405060
70
10
-3
10
-2
10
-1
10
0
10
1
10
2
Tj=150
o
C
Tj=25
oC
Tj=100
oC
Tj=125
oC
Reverse Characteristic (typ.)
IR
Reverse
Current
(mA)
VR
Reverse Voltage
(V)
01
23456
0
1
2
3
4
5
6
7
Per 1element
DC
Square wave
λ=180
o
Sine wave
λ=180
o
Square wave
λ=120
o
Square wave
λ=60
o
Forward Power Dissipation
WF
Forward
Power
Dissipation
(W)
Io
Average Forward Current
(A)
360°
Io
0
102030
40506070
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
Reverse Power Dissipation
α=180
o
DC
PR
Reverse
Power
Dissipation
(W)
VR
Reverse Voltage
(V)
360°
VR
0123
4
5
6
7
8
80
90
100
110
120
130
140
150
160
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Square wave
λ=120
o
Square wave
λ=60
o
Square wave
λ=180
o
Sine wave
λ=180
o
DC
Current Derating (Io-Tc)
Tc
Case
Temperatue
(
o
C)
Io
Average Output Current
(A)
360°
Io
VR=30V
10
100
10
100
1000
Junction Capacitance Characteristic
(typ.)
Cj
Junction
Capacitance
(pF)
VR
Reverse Voltage
(V)
λ
α
λ
相關PDF資料 |
PDF描述 |
|---|---|
| YG811S06R | 5 A, 60 V, SILICON, RECTIFIER DIODE |
| YG811S09R | SCHOTTKY BARRIER DIODE |
| YG811S09R | 5 A, 90 V, SILICON, RECTIFIER DIODE |
| YG811S09 | 5 A, 90 V, SILICON, RECTIFIER DIODE, TO-220 |
| YG811S09 | 5 A, 90 V, SILICON, RECTIFIER DIODE |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| YG811S06RSC-P | 制造商:Fuji Electric 功能描述: |
| YG811S09R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SCHOTTKY BARRIER DIODE |
| YG811S09RSC-P | 制造商:Fuji Electric 功能描述: |
| YG812S04R | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:Schottky Barrier Diode |
| YG812S04RSC-P | 制造商:Fuji Electric 功能描述: |
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