參數(shù)資料
型號(hào): YG811S04R
廠商: FUJI ELECTRIC CO LTD
元件分類: 整流器
英文描述: 5 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AC
封裝: SC-67, TO-220F15, 2 PIN
文件頁(yè)數(shù): 2/3頁(yè)
文件大?。?/td> 56K
代理商: YG811S04R
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
Per 1element
DC
Square wave
λ =180°
Sine wave
λ =180°
Square wave
λ =120°
Square wave
λ =60°
Forward Power Dissipation
WF
Forward
Power
Dissipation
(W)
Io Average Forward Current (A)
YG811S04R
(40V / 5A TO-22OF15)
Characteristics
0.1
1
10
100
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Tj=150°C
Tj=125°C
Tj=100°C
Tj=25°C
Forward Characteristic (typ.)
IF
Forward
Current
(A)
VF Forward Voltage (V)
0
102030
4050
10
-3
10
-2
10
-1
10
0
10
1
10
2
Tj=150°C
Tj=25°C
Tj=100°C
Tj=125°C
Reverse Characteristic (typ.)
IR
Reverse
Current
(mA)
VR Reverse Voltage (V)
360°
Io
λ
0
5
10
15
20
25
30
35
40
45
50
0
2
4
6
8
10
12
Reverse Power Dissipation
α =180°
DC
PR
Reverse
Power
Dissipation
(W)
VR Reverse Voltage (V)
360°
VR
α
0
1
23
45
67
8
80
90
100
110
120
130
140
150
160
λ :Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Square wave
λ =120°
Square wave
λ =60°
Square wave
λ =180°
Sine wave
λ =180°
DC
Current Derating (Io-Tc)
Tc
Case
Temperature
(°C)
Io Average Output Current (A)
360°
Io
VR=30V
λ
1
10
100
1000
Junction Capacitance Characteristic (typ.)
Cj
Junction
Capacitance
(pF)
VR Reverse Voltage (V)
相關(guān)PDF資料
PDF描述
YG811S04 5 A, 40 V, SILICON, RECTIFIER DIODE, TO-220
YG811S06 5 A, 60 V, SILICON, RECTIFIER DIODE, TO-220
YG811S06R SCHOTTKY BARRIER DIODE
YG811S06R 5 A, 60 V, SILICON, RECTIFIER DIODE
YG811S09R SCHOTTKY BARRIER DIODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
YG811S06R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SCHOTTKY BARRIER DIODE
YG811S06RSC-P 制造商:Fuji Electric 功能描述:
YG811S09R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SCHOTTKY BARRIER DIODE
YG811S09RSC-P 制造商:Fuji Electric 功能描述:
YG812S04R 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:Schottky Barrier Diode