參數(shù)資料
型號: YG802C03R
廠商: Electronic Theatre Controls, Inc.
英文描述: SCHOTTKY BARRIER DIODE
中文描述: 肖特基勢壘二極管
文件頁數(shù): 2/3頁
文件大?。?/td> 65K
代理商: YG802C03R
YG802C03R
(30V / 10A TO-22OF15)
Characteristics
0.1
1
10
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Tj=150
o
C
Tj=125
o
C
Tj=100
o
C
Tj=25
o
C
Forward Characteristic (typ.)
IF
Forward
Current
(A)
VF
Forward Voltage
(V)
0
5
10
15
20
25
30
35
10
-3
10
-2
10
-1
10
0
10
1
10
2
Tj=150
o
C
Tj=25
o
C
Tj=100
o
C
Tj=125
o
C
Reverse Characteristic (typ.)
IR
Reverse
Current
(mA)
VR
Reverse Voltage
(V)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Per 1element
DC
Square wave
λ=180
o
Sine wave
λ=180
o
Square wave
λ=120
o
Square wave
λ=60
o
Forward Power Dissipation
WF
Forward
Power
Dissipation
(W)
Io
Average Forward Current
(A)
360°
Io
λ
0
2
4
6
8
1012
14161820
22242628
3032
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Reverse Power Dissipation
α =180
o
DC
PR
Reverse
Power
Dissipation
(W)
VR
Reverse Voltage
(V)
360°
VR
α
02
46
8
10
12
14
90
95
100
105
110
115
120
125
130
135
140
145
150
155
160
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Square wave
λ=120
o
Square wave
λ=60
o
Square wave
λ=180
o
Sine wave
λ=180
o
DC
Current Derating (Io-Tc)
Tc
Case
Temperature
(
o C)
Io
Average Output Current
(A)
VR=20V
360°
λ
Io
10
100
10
100
1000
Junction Capacitance Characteristic (typ.)
Cj
Junction
Capacitance
(pF)
VR
Reverse Voltage
(V)
相關(guān)PDF資料
PDF描述
YG802C04R 5 A, 40 V, SILICON, RECTIFIER DIODE
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