- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄62763 > WED3DG6464V7D1I (WHITE ELECTRONIC DESIGNS CORP) 64M X 64 SYNCHRONOUS DRAM MODULE, DMA144 PDF資料下載
參數(shù)資料
| 型號(hào)： | WED3DG6464V7D1I |
| 廠商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分類： | DRAM |
| 英文描述： | 64M X 64 SYNCHRONOUS DRAM MODULE, DMA144 |
| 封裝： | SODIMM-144 |
| 文件頁(yè)數(shù)： | 4/5頁(yè) |
| 文件大?。?/td> | 489K |
| 代理商： | WED3DG6464V7D1I |
4
White Electronic Designs Corporation (508) 485-4000 www.whiteedc.com
June 2003 Rev. 1
ECO #16373
WED3DG6464V-D1
White Electronic Designs Corp reserves the right to change products or specifications without notice.
OPERATING CURRENT CHARACTERISTICS
(VCC = 3.3V, TA = 0°C to +70°C)
Notes: 1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noticed, input swing level is CMOS (VIH/VIL = VDDQ/VssQ)
Version
Parameter
Symbol
Conditions
133
100
Units Note
Operating Current
ICC1
Burst Length = 1
960
880
mA
1
(One bank active)
tRC tRC(min)
IOL = 0mA
Precharge Standby Current
ICC2P
CKE VIL(max), tCC = 10ns
40
mA
in Power Down Mode
ICC2PS
CKE & CLK VIL(max), tCC =
40
Icc2N
CKE VIH(min), CS VIH(min), tcc = 10ns
Precharge Standby Current
Input signals are charged one time during 20
320
in Non-Power Down Mode
Icc2NS
CKE VIH(min), CLK VIL(max), tcc =
mA
Input signals are stable
160
Active standby current in
ICC3P
CKE VIL(max), tCC = 10ns
65
mA
power-down mode
ICC3PS
CKE & CLK VIL(max), tcc =
65
ICC3N
CKE VIH(min), CS VIH(min), tcc = 10ns
Active standby current in
Input signals are changed one time during 20ns
400
mA
non power-down mode
ICC3NS
CKE VIH(min), CLK VIL(max), tcc =
input signals are stable
280
mA
Io = mA
Operating current (Burst mode)
ICC4
Page burst
1,120
1,040
mA
1
4 Banks activated
tCCD = 2CLK
Refresh current
ICC5
tRC tRC(min)
1,920
1,680
mA
2
Self refresh current
ICC6
CKE 0.2V
50
mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| WED3DG648V10D2I | 8M X 64 SYNCHRONOUS DRAM MODULE, DMA168 |
| WED3DG638V10D2I | 8M X 64 SYNCHRONOUS DRAM MODULE, DMA168 |
| WED3DG648V7D2 | 8M X 64 SYNCHRONOUS DRAM MODULE, DMA168 |
| WED3DG648V7D2I | 8M X 64 SYNCHRONOUS DRAM MODULE, DMA168 |
| WED3DG648V10D2 | 8M X 64 SYNCHRONOUS DRAM MODULE, DMA168 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WED3DG6464V-D1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SDRAM Modules - 144 Pin SO-DIMM. Unbuffered. w/PLL |
| WED3DG6464V-D2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SDRAM Modules - 168 Pin DIMM. Unbuffered |
| WED3DG6465V-D1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SDRAM Modules - 144 Pin SO-DIMM. Unbuffered |
| WED3DG6465V-D2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SDRAM Modules - 168 Pin DIMM. Unbuffered |
| WED3DG6466V10AD1 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB - 64Mx64 SDRAM UNBUFFERED |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。