參數(shù)資料
型號： VN4012L
廠商： SUPERTEX INC
元件分類： 小信號晶體管
英文描述： N-Channel Enhancement-Mode Vertical DMOS FETs
中文描述： 160 mA, 400 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
封裝： TO-92, 3 PIN
文件頁數(shù)： 2/2頁
文件大小： 441K
代理商： VN4012L
2
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 FAX: (408) 222-4895
www.supertex.com
11/12/01
2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
C
= 25
°
C
1W
θ
jc
°
C/W
θ
ja
°
C/W
I
DR
*
I
DRM
VN3515L (TO-92)
150mA
600mA
125
170
150mA
600mA
VN4012L (TO-92)
160mA
650mA
1W
125
170
160mA
650mA
*
I
D
(continuous) is limited by max rated T
j
.
VN3515L/VN4012L
Thermal Characteristics
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
VN3515
350
VN4012
400
V
GS(th)
I
GSS
I
DSS
Gate Threshold Voltage
0.6
1.8
V
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= 0.8 Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
V
DS
= 10V, V
GS
= 4.5V
V
GS
= 4.5V, I
D
= 100mA
V
GS
= 4.5V, I
D
= 100mA, TA = 125
°
C
V
GS
= 4.5V, I
D
= 100mA
V
GS
= 4.5V, I
D
= 100mA, TA = 125
°
C
V
DS
=15V, I
D
= 100mA
Gate Body Leakage
10
nA
Zero Gate Voltage Drain Current
1
100
μ
A
I
D(ON)
ON-State Drain Current
0.15
0.3
A
9.5
15
17
35
9.5
12
17
30
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
Forward Transconductance
125
350
m
Input Capacitance
110
Common Source Output Capacitance
30
pF
Reverse Transfer Capacitance
10
Turn-ON Delay Time
20
Rise Time
20
Turn-OFF Delay Time
65
Fall Time
65
Diode Forward Voltage Drop
1.2
V
V
GS
= 0V, I
SD
= 160mA
Notes:
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
3. See TN2540 data sheet for characteristic curves.
Drain-to-Source
Breakdown Voltage
V
V
GS
= 0V, I
D
= 100
μ
A
Static Drain-to-Source
ON-State Resistance
R
DS(ON)
VN3515
VN4012
Switching Waveforms and Test Circuit
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
ns
V
DS
= 25V, V
GS
= 0V
f = 1MHz
V
DD
= 25V
I
D
= 100mA
R
GEN
= 25
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
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相關代理商/技術參數(shù)
參數(shù)描述
VN4012L-G 功能描述:MOSFET 400V 12Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VN4012L-G P002 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET
VN4012L-G P003 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET
VN4012L-G P005 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET
VN4012L-G P013 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET
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