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參數(shù)資料
| 型號(hào)： | VN3515L |
| 廠商： | ELAN Microelctronics Corp . |
| 英文描述： | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓350V,15Ω，N溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管) |
| 中文描述： | N溝道增強(qiáng)型場(chǎng)效應(yīng)管垂直的DMOS（擊穿電壓350V，15Ω，?溝道增強(qiáng)型垂直的DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管） |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 21K |
| 代理商： | VN3515L |
7-218
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
C
= 25
°
C
1W
θ
jc
°
C/W
125
θ
ja
°
C/W
170
I
DR
*
I
DRM
VN3515L (TO-92)
150mA
600mA
150mA
600mA
VN4012L (TO-92)
160mA
650mA
1W
125
170
160mA
650mA
*
I
D
(continuous) is limited by max rated T
j
.
VN3515L/VN4012L
Thermal Characteristics
Symbol
BV
DSS
Parameter
Min
350
400
0.6
Typ
Max
Unit
Conditions
VN3515
VN4012
V
GS(th)
I
GSS
I
DSS
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
1.8
10
V
nA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= 0.8 Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
V
DS
= 10V, V
GS
= 4.5V
V
GS
= 4.5V, I
D
= 100mA
V
GS
= 4.5V, I
D
= 100mA, TA = 125
°
C
V
GS
= 4.5V, I
D
= 100mA
V
GS
= 4.5V, I
D
= 100mA, TA = 125
°
C
V
DS
=15V, I
D
= 100mA
1
100
μ
A
I
D(ON)
ON-State Drain Current
0.15
0.3
9.5
17
9.5
17
350
A
15
35
12
30
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
125
m
110
30
10
20
20
65
65
1.2
pF
V
V
GS
= 0V, I
SD
= 160mA
Notes:
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
3. See TN2540 data sheet for characteristic curves.
Drain-to-Source
Breakdown Voltage
V
V
GS
= 0V, I
D
= 100
μ
A
Static Drain-to-Source
ON-State Resistance
R
DS(ON)
VN3515
VN4012
Switching Waveforms and Test Circuit
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
ns
V
DS
= 25V, V
GS
= 0V
f = 1MHz
V
DD
= 25V
I
D
= 100mA
R
GEN
= 25
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
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