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參數(shù)資料
| 型號(hào)： | IDT7164L30YB |
| 廠商： | Integrated Device Technology, Inc. |
| 英文描述： | CMOS STATIC RAM 64K (8K x 8-BIT) |
| 中文描述： | 64K的的CMOS靜態(tài)RAM（8K的× 8位） |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大?。?/td> | 104K |
| 代理商： | IDT7164L30YB |
6.1
2
IDT7164S/L
CMOS STATIC RAM 64K (8K x 8-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN CONFIGURATIONS
PIN DESCRIPTIONS
Name
A
0
–A
12
I/O
0
–I/O
7
CS
1
CS
2
WE
Description
Address
Data Input/Output
Chip Select
Chip Select
Write Enable
Output Enable
Ground
Power
OE
GND
VCC
2967 tbl 01
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Rating
V
TERM
(2)
Terminal Voltage
with Respect
to GND
T
A
Operating
Temperature
T
BIAS
Temperature
Under Bias
T
STG
Storage
Temperature
P
T
Power Dissipation
I
OUT
DC Output
Current
Com’l.
–0.5 to +7.0
Mil.
Unit
V
–0.5 to +7.0
0 to +70
–55 to +125
°
C
–55 to +125
–65 to +135
°
C
–55 to +125
–65 to +150
°
C
1.0
50
1.0
50
W
mA
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
2. V
TERM
must not exceed VCC + 0.5V.
2967 tbl 03
DIP/SOJ
TOP VIEW
TRUTH TABLE
(1,2,3)
WE
CS
1
X
H
X
X
X
V
HC
V
HC
or
CS
2
X
L
OE
I/O
Function
X
X
X
High-Z
High-Z
High-Z
Deselected – Standby (I
SB
)
Deselected – Standby (I
SB
)
Deselected –Standby (I
SB1
)
V
LC
V
LC
H
H
H
X
H
H
L
X
L
L
L
X
H
L
X
High-Z
High-Z
Data
OUT
Read Data
Data
IN
Write Data
Deselected –Standby (I
SB1
)
Output Disabled
NOTES:
1. CS
2
will power-down
CS
1
, but
CS
1
will not power-down CS
2
.
2. H = V
IH
, L = V
IL
, X = don't care.
3. V
LC
= 0.2V, V
HC
= V
CC
- 0.2V
2967 tbl 02
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Grade
Temperature
Military
–55
°
C to +125
°
C
Commercial
0
°
C to +70
°
C
GND
0V
0V
VCC
5V
±
10%
5V
±
10%
2967 tbl 04
RECOMMENDED DC OPERATING
CONDITIONS
Symbol
Parameter
V
CC
Supply Voltage
GND
Supply Voltage
V
IH
Input HIGH Voltage
V
IL
Input LOW Voltage
Min.
4.5
0
2.2
–0.5
(1)
Typ.
5.0
0
— V
CC
+ 0.5
—
Max.
5.5
0
Unit
V
V
V
V
0.8
NOTE:
1. V
IL
(min.) = –1.5V for pulse width less than 10ns, once per cycle.
2967 tbl 05
2967 drw 02
5
6
7
8
9
10
11
12
13
14
A
12
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
I/O
0
I/O
1
I/O
2
GND
1
2
3
4
24
23
22
21
20
19
18
17
16
15
D28-1
D28-3
P28-1
P28-2
SO28-5
28
27
26
25
V
CC
WE
CS
2
A
8
A
9
A
11
OE
A
10
CS
1
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
NC
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參數(shù)描述 |
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| IDT7164L35DB | 制造商:Integrated Device Technology Inc 功能描述: 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 64KBIT 35NS 28CDIP |
| IDT7164L35P | 制造商:Integrated Device Technology Inc 功能描述: |
| IDT7164L35TCB | 制造商:Integrated Device Technology Inc 功能描述:Static RAM, 8Kx8, 28 Pin, Ceramic, DIP |
| IDT7164L35TDB | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 64KBIT 35NS 28CDIP |
| IDT7164L35Y | 功能描述:IC SRAM 64KBIT 35NS 28SOJ RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
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