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參數(shù)資料
| 型號： | V53C16258SHK40 |
| 廠商： | MOSEL-VITELIC |
| 元件分類： | DRAM |
| 英文描述： | 256K X 16 EDO DRAM, 40 ns, PDSO40 |
| 封裝： | PLASTIC, SOJ-40 |
| 文件頁數(shù)： | 19/20頁 |
| 文件大小： | 556K |
| 代理商： | V53C16258SHK40 |
8
V53C16258H Rev. 3.8 November 1999
MOSEL VITELIC
V53C16258H
Truth Table
Notes:
1.
Byte Write cycles LCAS or UCAS active.
2.
Byte Read cycles LCAS or UCAS active.
3.
Only one of the two CAS must be active (LCAS or UCAS).
Function
RAS
LCAS
UCAS
WE
OE
ADDRESS
I/O
Notes
Standby
H
X
High-Z
Read: Word
L
H
L
ROW/COL
Data Out
Read: Lower Byte
L
H
L
ROW/COL
Lower Byte, Data-Out
Upper Byte, High-Z
Read: Upper Byte
L
H
L
H
L
ROW/COL
Lower Byte, High-Z
Upper Byte, Data-Out
Write: Word (Early-Write)
L
X
ROW/COL
Data-In
Write: Lower Byte (Early)
L
H
L
X
ROW/COL
Lower Byte, Data-In
Upper Byte, High-Z
Read: Upper Byte (Early)
L
H
L
X
ROW/COL
Lower Byte, High-Z
Upper Byte, Data-In
Read-Write
L
H
→L
L
→H
ROW/COL
Data-Out, Data-In
1, 2
EDO Page-Mode Read
L
H
→L
H
→L
H
L
COL
Data-Out
2
EDO Page-Mode Write
L
H
→L
H
→L
L
X
COL
Data-In
2
EDO Page-Mode Read-Write
L
H
→L
H
→L
H
→L
L
→H
COL
Data-Out, Data-In
1, 2
Hidden Refresh Read
L
→H→L
L
H
L
ROW/COL
Data-Out
2
RAS-Only Refresh
L
H
X
ROW
High-Z
CBR Refresh
H
→L
L
X
High-Z
3
Self Refresh
H
→L
L
H
X
High-Z
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| V53C16258SHK45 | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH |
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