參數(shù)資料
型號： US1881LSE-AAA-000-RE
廠商： Melexis Technologies NV
文件頁數(shù)： 2/7頁
文件大?。?/td> 1194K
描述： IC LATCH CMOS MP TSOT23-3
產(chǎn)品目錄繪圖： TSOT-3L Series Top
標(biāo)準(zhǔn)包裝： 1
傳感范圍： 9.5mT 跳閘，-9.5mT 釋放
類型： 雙極卡鎖
電源電壓： 3.5 V ~ 24 V
電流 - 電源： 5mA
電流 - 輸出（最大）： 50mA
輸出類型： 數(shù)字式，開漏極
工作溫度： -40°C ~ 150°C
封裝/外殼： TO-236-3，SC-59，SOT-23-3
供應(yīng)商設(shè)備封裝： TSOT-23-3
包裝： 標(biāo)準(zhǔn)包裝
產(chǎn)品目錄頁面： 2792 (CN2011-ZH PDF)
其它名稱： US1881LSE-AAA-000-REDKR
US1881LSEDKR
US1881LSEDKR-ND
US188LESE-AAA-000-REDKR-ND
 
S
1
Hall Latch  High Sensitivity
1
Rev 016
f 12
Mar/12
 
 
Table of Contents 
 
1 Functional Diagram ........................................................................................................ 1 
 
2 General Description ........................................................................................................ 1 
 
3 Glossary of Terms .......................................................................................................... 3 
 
4 Absolute Maximum Ratings ........................................................................................... 3 
 
5 Pin Definitions and Descriptions ................................................................................... 3 
 
6 General Electrical Specifications .................................................................................. 4 
 
7 Magnetic Specifications ................................................................................................. 4 
 
8 Output Behaviour versus Magnetic Pole ...................................................................... 4 
 
9 Detailed General Description ......................................................................................... 5 
 
10 Unique Features ............................................................................................................ 5 
 
11 Performance Graphs .................................................................................................... 6 
11.1 Magnetic parameters vs. T
A
.....................................................................................................................6
11.2 Magnetic parameters vs. V
DD
...................................................................................................................6
11.3 V
DSon
vs. T
A
..............................................................................................................................................6
11.4 V
DSon
vs. V
DD
............................................................................................................................................6
11.5 I
DD
vs. T
A
..................................................................................................................................................6
11.6 I
DD
vs. V
DD
................................................................................................................................................6
11.7 I
OFF
vs. T
A
.................................................................................................................................................7
11.8 I
OFF
vs. V
DD
...............................................................................................................................................7
 
12 Test Conditions ............................................................................................................. 7 
12.1 Supply Current .........................................................................................................................................7
12.2 Output Saturation Voltage .......................................................................................................................7
12.3 Output Leakage Current ..........................................................................................................................7
12.4 Magnetic Thresholds ...............................................................................................................................7
 
13 Application Information................................................................................................ 8 
13.1 Typical Three-Wire Application Circuit ....................................................................................................8
13.2 Two-Wire Circuit ......................................................................................................................................8
13.3 Automotive and Harsh, Noisy Environments Three-Wire Circuit ............................................................8
 
14 Application Comments ................................................................................................. 8 
 
15 Standard information regarding manufacturability of Melexis products with
different soldering processes........................................................................................... 9 
 
16 ESD Precautions ........................................................................................................... 9 
 
17 Package Information................................................................................................... 10 
17.1 SE Package (TSOT-3L).........................................................................................................................10
17.2 UA Package (TO-92 flat) .......................................................................................................................11
 
18 Disclaimer.................................................................................................................... 12 
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