參數(shù)資料
型號(hào): US104S
廠商: 友順科技股份有限公司
英文描述: SCRs
中文描述: 可控硅
文件頁數(shù): 1/4頁
文件大?。?/td> 201K
代理商: US104S
UTC US104S/N SCR
SCRs
DESCRIPTION
Thanks to highly sensitive triggering levels, the
UTC US104S is suitable for all applications where the
available gate current is limited, such as motor control
for hand tools, kitchen aids, overvoltage
crowbar protection for low power supplies, ...
Available in through-hole or surface-mount
packages, they provide an optimized performance
in a limited space area.
SYMBOL
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R301-011,C
K
A
G
TO-220
1
1: CATHODE 2: ANODE 3: GATE
ABSOLUTE RATINGS
PARAMETER
SYMBOL
RATING
400
600
800
4
2.5
33
30
4.5
UNIT
Repetitive peak off-state voltages and
Repetitive peak reverse voltage
US104S/N-4
US104S/N-6
US104S/N-8
RMS on-state current (180° conduction angle) (Tc = 115°C)
Average on-state current (180° conduction angle) (Tc = 115°C)
Non repetitive surge peak on-state current (Tj = 25°C)
V
DRM
, V
RRM
V
I
T(RMS)
I
T(AV)
A
A
tp=8.3ms
tp=10ms
I
TSM
A
I2t Value for fusing (tp = 10 ms, Tj = 25°C)
Critical rate of rise of on-state current
(IG = 2 x IGT , tr
100 n s, F= 60 Hz ,Tj = 125°C)
Peak gate current (tp=20
μ
s, Tj = 125°C)
Average gate power dissipation (Tj = 125°C)
Storage junction temperature range
Operating junction temperature range
UTC US104S(SENSITIVE) ELECTRICAL CHARACTERISTICS
(Tj=25
unless otherwise specified)
PARAMETER
SYMBOL
Gate trigger Current
I
GT
Gate trigger Voltage
V
GT
Gate non-trigger voltage
Reverse gate voltage
V
RG
Holding Current
I
H
I2t
A2S
dI/dt
50
A/μs
I
GM
P
G(AV)
Tstg
Tj
1.2
0.2
A
W
°C
°C
-40 ~ +150
-40 ~ +125
TEST CONDITIONS
V
D
= 12 V, R
L
=33
V
D
= 12 V, R
L
=33
V
D
= V
DRM,
R
L
= 3.3 k
,
R
GK
= 220
Tj = 125°C
I
RG
= 10 μA
I
T
= 50 mA, R
GK
= 1 k
MIN
MAX.
200
0.8
UNIT
μA
V
V
GD
0.1
V
8
V
mA
5
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