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參數(shù)資料
| 型號： | UNR221W |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon NPN epitaxial planar type |
| 中文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 56K |
| 代理商： | UNR221W |
Transistors with built-in Resistor
UNR221W
Silicon NPN epitaxial planar type
1
Publication date: December 2003
SJH00011BED
For digital circuits
■
Features
Base-emitter resistance R
BE
: 100 k
,
Mini type package, allowing downsizing of the equipment.
Allowing automatic insertion through tape packing.
■
Absolute Maximum Ratings
T
a
=
25
°
C
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Marking Symbol: 9F
Unit: mm
0.40
+0.10
(
1
+
–
2
+
–
2
1
3
(0.95) (0.95)
1.9
±
0.1
2.90
+0.20
0.16
+0.10
0
±
0
5
10
0
1
+
–
1
+
–
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Internal Connection
B
C
E
R
2
(100 k
)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
10 V, I
C
=
5 mA
I
C
=
10 mA, I
B
=
0.3 mA
50
V
Collector-emitter voltage (Base open)
V
CEO
50
V
Collector-base cutoff current (Emitter open)
I
CBO
I
CEO
0.1
μ
A
μ
A
μ
A
Collector-emitter cutoff current (Base open)
0.5
Emitter-base cutoff current (Collector open)
I
EBO
100
Forward current transfer ratio
h
FE
80
Collector-emitter saturation voltage
V
CE(sat)
0.25
V
Input resistance
R
2
30%
100
+
30%
k
Transition frequency
f
T
V
CB
=
10 V, I
E
=
2 mA, f
=
200 MHz
100
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
V
CEO
50
V
Collector-emitter voltage (Base open)
50
V
Collector current
I
C
100
mA
Total power dissipation
P
T
T
j
200
mW
Junction temperature
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
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| UNR221XSERIES(UN221XSERIES) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:UNR221X Series (UN221X Series) - NPN Transistors with built-in Resistor |
| UNR221Z | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar transistor |
| UNR221Z(UN221Z) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス － 抵抗內(nèi)蔵型トランジスタ |
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