參數(shù)資料
型號(hào)： TSM3481
廠商： Taiwan Semiconductor Co., Ltd.
英文描述： 30V P-Channel MOSFET
中文描述： 30V的P通道MOSFET
文件頁數(shù)： 2/6頁
文件大?。?/td> 309K
代理商： TSM3481
TSM3481
30V P-Channel MOSFET
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter
2/6
Version: A07
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
GS
= 0V, I
D
= -250uA
V
DS
= V
GS
, I
D
= -250
μ
A
V
GS
= ±20V, V
DS
= 0V
V
DS
= -24V, V
GS
= 0V
V
DS
≤
-5V, V
GS
= -4.5V
V
GS
= -10V, I
D
= -5.3A
V
GS
= -4.5V, I
D
= -4.1A
V
DS
= -15V, I
D
= -5.3A
I
S
= -1.7A, V
GS
= 0V
BV
DSS
V
GS(TH)
I
GSS
I
DSS
I
D(ON)
-30
-1
--
--
-20
--
--
--
--
--
--
--
--
--
38
63
12
-0.85
--
-3
V
V
nA
μ
A
A
±100
1.0
--
48
79
--
-1.2
Drain-Source On-State Resistance
a
R
DS(ON)
m
Ω
Forward Transconductance
a
Diode Forward Voltage
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
c
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
a. pulse test: PW
≤
300
μ
S, duty cycle
≤
2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
g
fs
V
SD
S
V
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
--
--
--
--
--
--
18.09
6.52
3.25
1047.98
172.82
115.50
--
--
--
--
--
--
V
DS
= -15V, I
D
= -5.3A,
V
GS
= -10V
nC
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
pF
t
d(on)
t
r
t
d(off)
t
f
--
--
--
--
20.52
4.43
42.81
7.35
--
--
--
--
V
DD
= -15V, R
L
= 15
Ω
,
I
D
= -1A, V
GEN
= -10V,
R
G
= 6
Ω
nS
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