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參數(shù)資料
| 型號(hào)： | TS12N20CS |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | Single N-Channel 4.5V Specified MicroSurf |
| 中文描述： | 單個(gè)N -溝道4.5V的指定MicroSurf |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 519K |
| 代理商： | TS12N20CS |
- 2 -
TSC
Rev. 1 05/2003
Absolute Maximum Ratings
T
A
=25°C unless otherwise noted
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
20
V
Gate-Source Voltage
Drain Current
V
GSS
I
D
+12
6
25
V
A
A
– Continuous
– Pulsed
Power Dissipation (Steady State)
P
D
2.2
W
Operating and Storage Junction Temperature Range
Thermal Characteristics
T
J,
T
STG
-55 to +150
°C
Thermal Resistance, Junction-to-Ambient
R
θ
JA
56
°C/W
Thermal Resistance, Junction-to-Ball
R
θ
JR
4.5
°C/W
Thermal Resistance, Junction-to-Case
R
θ
JC
0.6
°C/W
Characteristics
Symbol Conditions
Min
Typ
Max Unit
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
=250
μ
A
20
--
--
V
Gate-Body Leakage
I
GGS
V
GS
=±12V, V
DS
=0V
--
--
±150
nA
Zero Gate Voltage Drain Current
I
DSS
Tj=150°C, V
DS
=20V, V
GS
=0V
--
--
250
uA
Drain to Drain Sense Leakage
I
DDS
Tj=150°C, V
DS
=20V, V
GS
=0V
--
--
250
uA
Static Drain-Source On-Resistance
R
DS(on)
V
GS
=4.5V, I
D
=12A
--
3.9
--
m
Drain Sense On-Resistance
R
DSDS(on)
V
GS
=4.5V, I
D
=0.35A
--
137
--
m
Gate Threshold Voltage
V
GS(th)
V
DS
=V
GS
, I
D
=250uA
--
1.3
--
V
Total Gate Charge
Qg
V
DS
=20V, V
GS
=4.5V, I
D
=12A
--
19.8
--
nC
Gate Resistance
Rg
V
DS
=0V, f=1MHz
--
0.4
--
Ohms
Output Capacitance
Coss
V
DS
=20V, V
GS
=0V, f=1MHz
--
2.4
--
nF
Input Capacitance
Ciss
V
DS
=20V, V
GS
=0V, f=1MHz
--
320
--
pF
Reverse transfer capacitance
Crss
V
DS
=20V, V
GS
=0V, f=1MHz
--
TBD
--
pF
Reverse Recovery time
Source-Drain Diode
trr
If=12A, di/dt=100A/us
Tj=150°C
--
--
40
ns
Forward On-Voltage
Source-Drain Diode
V
SD
Is=12A, V
GS
=0V
--
0.75
--
V
On-State Drain Current
ID(on)
V
GS
=4.5V, V
DS
=1V
25
--
--
A
Avalanche Energy UIS
Eas
Single Pulse 10us, V
DS
>BV
DSS
2.5
--
--
mJ
TS12N20CS Electrical Specifications
T
A
= 25°C unless otherwise specified
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