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參數(shù)資料
| 型號(hào)： | TPS2331PW |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | SINGLE HOT SWAP POWER CONTROLLER WITH CIRCUIT BREAKER AND POWER-GOOD REPORTING |
| 中文描述： | 單熱插拔功率斷路器及功率控制器，高質(zhì)量的報(bào)告 |
| 文件頁(yè)數(shù)： | 15/20頁(yè) |
| 文件大?。?/td> | 345K |
| 代理商： | TPS2331PW |
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TPS2330, TPS2331
SINGLE HOT SWAP POWER CONTROLLER WITH
CIRCUIT BREAKER AND POWER-GOOD REPORTING
SLVS277A – MARCH 2000– REVISED APRIL 2000
15
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
APPLICATION INFORMATION
gate drive circuitry
The TPS2330/TPS2331 includes four separate features associated with each gate-drive terminal:
A charging current of approximately 15
μ
A is applied to enable the external MOSFET transistor. This current
is generated by an internal charge pump that can develop a gate-to-source potential (referenced to DISCH)
of 9 V–12 V. DISCH must be connected to the external MOSFET source terminal to ensure proper operation
of this circuitry.
A discharge current of approximately 75
μ
A is applied to disable the external MOSFET transistor. Once the
transistor gate voltage has dropped below approximately 1.5 V, this current is disabled and the UVLO
discharge driver is enabled instead. This feature allows the part to enter a low-current shutdown mode while
ensuring that the gate of the external MOSFET transistor remain at a low voltage.
During a UVLO condition, the gate of the MOSFET transistor is pulled down by an internal PMOS transistor.
This transistor continues to operate even if the voltage at IN is 0 V. This circuitry also helps hold the external
MOSFET transistor off when power is suddenly applied to the system.
During an overcurrent fault condition, the external MOSFET transistor that exhibited an over-current
condition will be rapidly turned off by an internal pulldown circuit capable of pulling in excess of 400 mA (at
4 V) from the pin. Once the gate has been pulled below approximately 1.5 V, this driver is disengaged and
the UVLO driver is enabled instead.
setting the current-limit circuit-breaker threshold
The current sensing resistor R
ISENSE
and the current limit setting resistor R
ISET
determine the current limit of
the channel, and can be calculated by the following equation:
I
LMT
R
ISET
50
10
–6
R
ISENSE
Typically R
ISENSE
is usually very small (0.001
to 0.1
). If the trace and solder-junction resistances between
the unction of R
ISENSE
and ISENSE and the unction of R
ISENSE
and R
ISET
are greater than 10% of the R
ISENSE
value, then these resistance values should be added to the R
ISENSE
value used in the calculation above.
Table 2 shows some of the current sense resistors available in the market.
Table 2. Some Current Sense Resistors
CURRENT RANGE
(A)
PART NUMBER
DESCRIPTION
MANUFACTURER
0 to 1
WSL-1206, 0.05 1%
0.05
, 0.25 W, 1% resistor
0.025
, 0.25 W, 1% resistor
0.015
, 0.25 W, 1% resistor
0.010
, 0.5 W, 1% resistor
0.007
, 0.5 W, 1% resistor
0.005
, 0.5 W, 1% resistor
1 to 2
WSL-1206, 0.025 1%
2 to 4
WSL-1206, 0.015 1%
Vishay Dale
4 to 6
WSL-2010, 0.010 1%
6 to 8
8 to 10
WSL-2010, 0.007 1%
WSR-2, 0.005 1%
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