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參數(shù)資料
| 型號： | TISP4360H3BJ-S |
| 廠商： | BOURNS INC |
| 元件分類： | 浪涌電流限制器 |
| 英文描述： | 360 V, 60 A, SILICON SURGE PROTECTOR, DO-214AA |
| 封裝： | LEAD FREE, PLASTIC, SMBJ, 2 PIN |
| 文件頁數(shù)： | 7/14頁 |
| 文件大?。?/td> | 389K |
| 代理商： | TISP4360H3BJ-S |
JUNE 1999 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
IDRM
Repetitive peak off-
state current
VD = VDRM
TA = 25 °C
TA = 85 °C
±5
±10
A
V(BO)
Breakover voltage
dv/dt = ±750 V/ms, RSOURCE = 300
±360
V
V(BO)
Impulse breakover
voltage
dv/dt ≤ ±1000 V/s, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A/s, Linear current ramp,
Maximum ramp value = ±10 A
±372
V
I(BO)
Breakover current
dv/dt = ±750 V/ms, RSOURCE = 300
±0.15
±0.8
A
VT
On-state voltage
IT = ±5A, tW = 100 s
±3V
IH
Holding current
IT = ±5A, di/dt = -/+ 30 mA/ms
±0.225
±0.8
A
dv/dt
Critical rate of rise of
off-state voltage
Linear voltage ramp, Maximum ramp value < 0.85VDRM
±5kV/s
ID
Off-state current
VD = ±50 V
TA = 85 °C
±10
A
TISP4360H3BJ Overvoltage Protector Series
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted)
Rating
Symbol
Value
Unit
Repetitive peak off-state voltage, (see Note 1)
VDRM
±290
V
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
ITSP
A
2/10 s(GR-1089-CORE, 2/10 s voltage wave shape)
500
8/20 s(IEC 61000-4-5, 1.2/50 s voltage, 8/20 current combination wave generator)
300
10/160 s(FCC Part 68, 10/160 s voltage wave shape)
250
5/200 s(VDE 0433, 10/700 s voltage wave shape)
220
0.2/310 s (I3124, 0.5/700 s voltage wave shape)
200
5/310 s(ITU-T K.20/21, 10/700 s voltage wave shape)
200
5/310 s(FTZ R12, 10/700 s voltage wave shape)
200
10/560 s(FCC Part 68, 10/560 s voltage wave shape)
160
10/1000 s(GR-1089-CORE, 10/1000 s voltage wave shape)
100
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
ITSM
55
60
2.2
A
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Maximum overload on-state current without open circuit, 50 Hz/60 Hz a.c.
0.015 s
0.04 s
0.08 s
0.15 s
0.48 s
4.2 s
IT(OV)M
60
40
30
23
15
7
A rms
Initial rate of rise of on-state current,
Exponential current ramp, Maximum ramp value < 200 A
diT/dt
400
A/s
Junction temperature
TJ
-40 to +150
°C
Storage temperature range
Tstg
-65 to +150
°C
NOTES: 1. See Applications Information and Figure 9 for voltage values at lower temperatures.
2. Initially, theTISP4360H3BJ must be in thermal equilibrium with TJ =25 °C.
3. The surge may be repeated after the TISP4360H3BJ returns to its initial conditions.
4. See Applications Information and Figure 10 for current ratings at other temperatures.
5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 7 for the current ratings at other durations. Derate current values at -0.61 %/°C for ambient
temperatures above 25 °C.
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TISP4360H4BJ | 制造商:POINN 制造商全稱:Power Innovations Ltd 功能描述:BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| TISP4360H4BJR | 功能描述:硅對稱二端開關(guān)元件 RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TISP4360H4BJR-S | 功能描述:硅對稱二端開關(guān)元件 RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TISP4360L3AJ | 制造商:BOURNS 制造商全稱:Bourns Electronic Solutions 功能描述:BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| TISP4360L3AJR | 功能描述:硅對稱二端開關(guān)元件 RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA |
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