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參數(shù)資料
| 型號： | TGA6316 |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 衰減器 |
| 英文描述： | 6 - 17 GHz Dual-Channel Power Amplifier |
| 中文描述： | 6000 MHz - 17000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 0.256 X 0.189 INCH, 0.004 INCH HEIGHT, DIE PACKAGE |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 760K |
| 代理商： | TGA6316 |
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Product Data Sheet
1
6 - 17 GHz Dual-Channel Power Amplifier TGA6316-EEU
Key Features and Performance
6 to 17 GHz Frequency Range
Dual Channel Power Amplifier
20.5dB Typical Gain, Single Channel
1.5:1 Typical Input SWR, 2.1:1 Typical
Output SWR, Single Channel
29.5 dBm Output Power at 3 dB Gain
Compression, (31dBm combined)
6.5024 x 4.8006 x 0.1016 mm (0.256 x
0.189 x 0.004 in.)
Description
The TriQuint TGA6316-EEU is a dual channel GaAs monolithic amplifier which
operates from 6 to 17-GHz. Each channel features three-stage topology with a
1200-mm dual-gate FET distributed amplifier for the first stage, a 1200 μm single
gate FET second stage, and a 1900 μm single gate FET third stage. The dual-
channel construction is designed for off-chip combining.
A single channel of the TGA6316-EEU provides 20.5-dB typical small signal gain
and 29.5 dBm output power at 3 dB gain compression. The TGA6316-EEU amplifier
is designed for use in wideband systems such as electronic warfare,
expendable decoys and test equipment.
Bond pad and backside metallization is gold plated for compatibility with eutectic
alloy attachment methods as well as the thermocompression and thermosonic wire
bonding processes. Ground is provided to the circuitry through vias to the backside
metallization.
相關PDF資料 |
PDF描述 |
|---|---|
| TGA6316-EEU | 6 - 17 GHz Dual-Channel Power Amplifier |
| TGA6345-EEU | 2 - 18 GHz Gain Block Amplifier |
| TGA6345 | ECONOLINE: RB & RA - Dual Output from a Single Input Rail- Power Sharing on Output- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- Custom Solutions Available- UL94V-0 Package Material- Efficiency to 85% |
| TGA8014 | 6 - 18 GHz Power Amplifier |
| TGA8014-SCC | 6 - 18 GHz Power Amplifier |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| TGA6316-EEU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:6 - 17 GHz Dual-Channel Power Amplifier |
| TGA6345 | 功能描述:射頻放大器 2.0-18GHz Gain Block AGC RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| TGA6345-EEU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:2 - 18 GHz Gain Block Amplifier |
| TGA8014 | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:6 - 18 GHz Power Amplifier |
| TGA8014-SCC | 功能描述:射頻放大器 6.0-18GHz Power Amp RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
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