參數(shù)資料
型號(hào)： TC1301B-FFAVMFTR
元件分類： 固定正電壓多路輸出LDO穩(wěn)壓器
英文描述： DUAL OUTPUT, FIXED POSITIVE LDO REGULATOR, PDSO8
封裝： 3 X 3 MM, 1 MM HEIGHT, PLASTIC, DFN-8
文件頁數(shù)： 10/26頁
文件大?。?/td> 1080K
代理商： TC1301B-FFAVMFTR
TC1301A/B
DS21798A-page 18
2003 Microchip Technology Inc.
The maximum power dissipation capability for a
package can be calculated given the junction to
ambient thermal resistance and the maximum ambient
temperature for the application. The following equation
can be used to determine the package maximum
internal power dissipation.
EQUATION
6.3
Typical Application
Internal power dissipation, junction temperature rise,
junction temperature and maximum power dissipation
are calculated in the following example. The power
dissipation as a result of ground current is small
enough to be neglected.
6.3.1
POWER DISSIPATION EXAMPLE
Device Junction Temperature Rise
The internal junction temperature rise is a function of
internal power dissipation and the thermal resistance
from junction to ambient for the application. The
thermal resistance from junction to ambient (R
θJA) is
derived from an EIA/JEDEC standard for measuring
thermal resistance for small surface-mount packages.
The EIA/JEDEC specification is JESD51-7, “High
Effective Thermal Conductivity Test Board for Leaded
Surface Mount Packages”. The standard describes the
test method and board specifications for measuring the
thermal resistance from junction to ambient. The actual
thermal resistance for a particular application can vary
depending on many factors such as copper area and
thickness. Refer to AN792, “A Method To Determine
How Much Power a SOT32 Can Dissapate in Your
Application” (DS00792), for more information regarding
this subject.
Junction Temperature Estimate
To estimate the internal junction temperature, the
calculated temperature rise is added to the ambient or
offset temperature. For this example, the worst-case
junction temperature is estimated below:
Maximum Package Power Dissipation at 50°C
Ambient Temperature
Package
Package Type = 3X3DFN8
Input Voltage
VIN = 2.7V to 4.2V
LDO Output Voltages and Currents
VOUT1 = 2.8V
IOUT1 =300 mA
VOUT2 = 1.8V
IOUT2 =150 mA
PDMAX
()
TJMAX
()
TAMAX
()
–
()
R
θJA
---------------------------------------------------
=
PD(MAX) = Maximum device power dissipation.
TJ(MAX) = Maximum continuous junction
temperature.
TA(MAX) = Maximum ambient temperature.
R
θJA = Thermal resistance from junction to ambient.
TJRISE
()
PDMAX
()
R
θ
JA
×
=
TJ(RISE) = Rise in device junction temperature over
the ambient temperature.
PD(MAX) = Maximum device power dissipation.
R
θJA = Thermal resistance from junction-to-ambient.
TJ
TJRISE
()
TA
+
=
TJ = Junction Temperature.
TJ(RISE) = Rise in device junction temperature over
the ambient temperature.
TA = Ambient Temperature.
Maximum Ambient Temperature
TA(MAX) =50°C
Internal Power Dissipation
Internal Power dissipation is the sum of the power
dissipation for each LDO pass device.
PLDO1(MAX) =(VIN(MAX) - VOUT1(MIN)) x
IOUT1(MAX)
PLDO1 = (4.2V - (0.975 x 2.8V)) x 300 mA
PLDO1 = 441.0 milli-Watts
PLDO2 = (4.2V - (0.975 X 1.8V)) x 150 mA
PLDO2 = 366.8 milli-Watts
PTOTAL =PLDO1 + PLDO2
PTOTAL= 807.8 milli-Watts
TJ(RISE) =PTOTAL x RqJA
TJRISE = 807.8 milli-watts x 41.0 °C/Watt
TJRISE = 33.1°C
TJ =TJRISE + TA(MAX)
TJ = 83.1°C
3X3DFN8 (41°C/Watt R
θJA)
PD(MAX) = (125°C - 50°C) / 41°C/W
PD(MAX) = 1.83 Watts
MSOP8 (208°C/Watt R
θJA)
PD(MAX) = (125°C - 50°C) / 208°C/W
PD(MAX) = 0.360 Watts
相關(guān)PDF資料
PDF描述
TC1N5224B.TR 2.8 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
TC1N5252B.TB 24 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
TC1N5262B.TR 51 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
TC1N5252C 24 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
TC1N5256C 30 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TC1301B-FFAVUA 功能描述:低壓差穩(wěn)壓器 - LDO Dual CMOS LDO RoHS:否 制造商:Texas Instruments 最大輸入電壓:36 V 輸出電壓:1.4 V to 20.5 V 回動(dòng)電壓（最大值）:307 mV 輸出電流:1 A 負(fù)載調(diào)節(jié):0.3 % 輸出端數(shù)量: 輸出類型:Fixed 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VQFN-20
TC1301B-FHAVMF 功能描述:低壓差穩(wěn)壓器 - LDO Dual CMOS LDO 300mA & 150mA RoHS:否 制造商:Texas Instruments 最大輸入電壓:36 V 輸出電壓:1.4 V to 20.5 V 回動(dòng)電壓（最大值）:307 mV 輸出電流:1 A 負(fù)載調(diào)節(jié):0.3 % 輸出端數(shù)量: 輸出類型:Fixed 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VQFN-20
TC1301B-FHAVMFTR 功能描述:低壓差穩(wěn)壓器 - LDO Dual CMOS LDO 300mA & 150mA RoHS:否 制造商:Texas Instruments 最大輸入電壓:36 V 輸出電壓:1.4 V to 20.5 V 回動(dòng)電壓（最大值）:307 mV 輸出電流:1 A 負(fù)載調(diào)節(jié):0.3 % 輸出端數(shù)量: 輸出類型:Fixed 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VQFN-20
TC1301B-FHAVUA 功能描述:低壓差穩(wěn)壓器 - LDO Dual CMOS LDO 300mA & 150mA RoHS:否 制造商:Texas Instruments 最大輸入電壓:36 V 輸出電壓:1.4 V to 20.5 V 回動(dòng)電壓（最大值）:307 mV 輸出電流:1 A 負(fù)載調(diào)節(jié):0.3 % 輸出端數(shù)量: 輸出類型:Fixed 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VQFN-20
TC1301B-FHAVUATR 功能描述:低壓差穩(wěn)壓器 - LDO Dual CMOS LDO 300mA & 150mA RoHS:否 制造商:Texas Instruments 最大輸入電壓:36 V 輸出電壓:1.4 V to 20.5 V 回動(dòng)電壓（最大值）:307 mV 輸出電流:1 A 負(fù)載調(diào)節(jié):0.3 % 輸出端數(shù)量: 輸出類型:Fixed 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VQFN-20
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*