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TC1017
DS21813D-page 12
2005 Microchip Technology Inc.
5.0
THERMAL CONSIDERATIONS
5.1
Thermal Shutdown
Integrated thermal protection circuitry shuts the
regulator off when the die temperature exceeds
approximately 160°C. The regulator remains off until
the die temperature drops to approximately 150°C.
5.2
Power Dissipation: SC-70
The TC1017 is available in the SC-70 package. The
thermal
resistance
for
the
SC-70
package
is
approximately 450°C/W when the copper area used in
the PCB layout is similar to the JEDEC J51-7 high ther-
mal conductivity standard or semi-G42-88 standard.
For applications with a larger or thicker copper area,
the thermal resistance can be lowered. See AN792, “A
Method to Determine How Much Power a SOT-23 Can
Dissipate in an Application”, DS00792, for a method to
determine the thermal resistance for a particular appli-
cation.
The TC1017 power dissipation capability is dependant
upon several variables: input voltage, output voltage,
load current, ambient temperature and maximum
junction temperature. The absolute maximum steady-
state junction temperature is rated at +125°C. The
power dissipation within the device is equal to:
EQUATION 5-1:
The VIN x IGND term is typically very small when
compared to the (VIN–VOUT) x ILOAD term, simplifying
the power dissipation within the LDO to be:
EQUATION 5-2:
To
determine
the
maximum
power
dissipation
capability, the following equation is used:
EQUATION 5-3:
Given the following example:
Find:
1.
Internal power dissipation:
2.
Maximum allowable ambient temperature:
3.
Maximum
allowable
power
dissipation
at
desired ambient:
In this example, the TC1017 dissipates approximately
158.5 mW and the junction temperature is raised 71°C
over the ambient. The absolute maximum power
dissipation is 155 mW when given a maximum ambient
temperature of 55°C.
Input voltage, output voltage or load current limits can
also be determined by substituting known values in the
power dissipation equations.
power dissipation versus ambient temperature, as well
as typical maximum current versus ambient tempera-
ture, with a 1V input voltage to output voltage
differential, respectively.
FIGURE 5-1:
Power Dissipation vs.
Ambient Temperature (SC-70 package).
P
D
V
IN
V
OUT
–
() I
LOAD
V
IN
I
GN D
×
+
×
=
P
D
V
IN
V
OUT
–
() I
LOAD
×
=
P
DMAX
T
J_MAX
T
A_MAX
–
()
R
θ
JA
----------------------------------------------
=
Where:
TJ_MAX = the maximum junction
temperature allowed
TA_MAX = the maximum ambient
temperature
R
θJA
= the thermal resistance from
junction to air
VIN = 3.0V to 4.1V
VOUT = 2.85V ±2.5%
ILOAD = 120 mA (output current)
TA = 55°C (max. desired ambient)
P
DMAX
V
IN_MAX
V
OUT_MIN
–
() I
LOAD
×
=
4.1V
2.85
0.975
()
×
–
() 120mA
×
=
158.5mW
=
T
A_MAX
T
J_MAX
P
–
DM AX
R
θ
JA
×
=
125
°C 158.5mW 450°C/W
×
–
()
=
54
°C
=
125
°C71°C
–
()
=
P
D
T
J_MAX
T
A
–
R
θ
JA
------------------------------
=
155mW
=
125
°C55°C
–
450
°C/W
-----------------------------------
=
0
50
100
150
200
250
300
350
400
-40
-15
10
35
60
85
110
Ambient Temperature (°C)
P
o
w
e
rD
issi
pati
on
(m
W
)