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參數(shù)資料
| 型號： | TBB1010 |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Twin Build in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier |
| 中文描述： | 雙內(nèi)建偏置電路場效應(yīng)晶體管集成電路甚高頻/甚高頻射頻放大器 |
| 文件頁數(shù)： | 7/10頁 |
| 文件大?。?/td> | 80K |
| 代理商： | TBB1010 |
TBB1010
Rev.2, Feb. 2003, page 6 of 10
400
300
200
100
0
50
100
150
200
0
1
234
5
25
20
15
10
5
V
= 4 V
V
= V
G2S
G1
DS
25
20
15
10
5
0
1
234
5
50
40
30
20
10
0
12
34
5
V
= 5 V
R
= 120 k
DS
G
Channel
Power
Dissipation
Pch*
(mW)
Ambient Temperature
Ta (
°C)
Maximum Channel Power
Dissipation Curve
Drain
Current
I
(mA)
D
Typical Output Characteristics
Drain to Source Voltage
V
(V)
DS
Drain Current vs. Gate1 Voltage
Gate1 Voltage
V
(V)
G1
Drain
Current
I
(mA)
D
R
=
82
k
G
100
k
2 V
V
= 1 V
G2S
4 V
3 V
* Value on the glass epoxy board (50mm
× 40mm × 1mm)
120
k
150
k
180
k
Gate1 Voltage
V
(V)
G1
Forward Transfer Admittance
vs. Gate1 Voltage
fs
Forward
Transfer
Admittance
|y
|
(mS)
V
= 1 V
G2S
4 V
3 V
2 V
V
= 5 V
R
= 120 k
f = 1 kHz
DS
G
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TBB1010_06 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier |
| TBB1010_11 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier |
| TBB1010KMTL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier |
| TBB1010KMTL-H | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier |
| TBB1012 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier |
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